HM85N02 - Даташиты. Аналоги. Основные параметры
Наименование производителя: HM85N02
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 60 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 85 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 17.2 ns
Cossⓘ - Выходная емкость: 500 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0055 Ohm
Тип корпуса: TO220
HM85N02 Datasheet (PDF)
hm85n02.pdf
HM85N02 Description The HM85N02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =85A RDS(ON)
hm85n02k.pdf
HM K Description The HM85N02K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =85A RDS(ON)
hm85n95d.pdf
HM85N95D N-Channel Enhancement Mode Power MOSFET Description The HM85N95D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features VDS =82V,ID =95A Schematic diagram RDS(ON)
hm85n90.pdf
HM85N90 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM85N90 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS = 82V,ID =90A RDS(ON)
Другие MOSFET... HM8205 , HM8205A , HM8205D , HM8205Q , HM830 , HM830F , HM840 , HM840F , IRFZ46N , HM85N02K , HM85N80 , HM85N90 , HM85N95D , HM85P02 , HM85P02D , HM85P02K , HM8810A .
History: NDS331N | AP25G03GD | 3N190 | AP2222D | HM9435 | 3N324 | AP25N04D
History: NDS331N | AP25G03GD | 3N190 | AP2222D | HM9435 | 3N324 | AP25N04D
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