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HM85N90 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HM85N90
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 170 W
   Voltaje máximo drenador - fuente |Vds|: 82 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 90 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 85.7 nC
   Tiempo de subida (tr): 54.3 nS
   Conductancia de drenaje-sustrato (Cd): 630.6 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0085 Ohm
   Paquete / Cubierta: TO220

 Búsqueda de reemplazo de MOSFET HM85N90

 

HM85N90 Datasheet (PDF)

 ..1. Size:539K  cn hmsemi
hm85n90.pdf

HM85N90 HM85N90

HM85N90 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM85N90 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS = 82V,ID =90A RDS(ON)

 8.1. Size:606K  cn hmsemi
hm85n95d.pdf

HM85N90 HM85N90

HM85N95DN-Channel Enhancement Mode Power MOSFET Description The HM85N95D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features VDS =82V,ID =95A Schematic diagram RDS(ON)

 9.1. Size:699K  cn hmsemi
hm85n02k.pdf

HM85N90 HM85N90

HM KDescription The HM85N02K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =85A RDS(ON)

 9.2. Size:504K  cn hmsemi
hm85n80.pdf

HM85N90 HM85N90

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features VDS =85V,ID =80A Schematic diagram RDS(ON)

 9.3. Size:835K  cn hmsemi
hm85n02.pdf

HM85N90 HM85N90

HM85N02Description The HM85N02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =85A RDS(ON)

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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