All MOSFET. HM85N90 Datasheet

 

HM85N90 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HM85N90
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 170 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 82 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 90 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 85.7 nC
   trⓘ - Rise Time: 54.3 nS
   Cossⓘ - Output Capacitance: 630.6 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: TO220

 HM85N90 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM85N90 Datasheet (PDF)

 ..1. Size:539K  cn hmsemi
 hm85n90.pdf

HM85N90 HM85N90

HM85N90 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM85N90 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS = 82V,ID =90A RDS(ON)

 8.1. Size:606K  cn hmsemi
 hm85n95d.pdf

HM85N90 HM85N90

HM85N95DN-Channel Enhancement Mode Power MOSFET Description The HM85N95D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features VDS =82V,ID =95A Schematic diagram RDS(ON)

 9.1. Size:699K  cn hmsemi
 hm85n02k.pdf

HM85N90 HM85N90

HM KDescription The HM85N02K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =85A RDS(ON)

 9.2. Size:504K  cn hmsemi
 hm85n80.pdf

HM85N90 HM85N90

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features VDS =85V,ID =80A Schematic diagram RDS(ON)

 9.3. Size:835K  cn hmsemi
 hm85n02.pdf

HM85N90 HM85N90

HM85N02Description The HM85N02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =85A RDS(ON)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: OSG70R2K6DF

 

 
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