HM85P02K Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HM85P02K  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 80 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 85 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 42 nS

Cossⓘ - Capacitancia de salida: 577 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm

Encapsulados: TO252

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HM85P02K datasheet

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HM85P02K

HM85P02K P-Channel Enhancement Mode Power MOSFET Description The HM85P02K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-20V,ID =-85A Schematic diagram RDS(ON)

 7.1. Size:1085K  cn hmsemi
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HM85P02K

HM85P02 P-Channel Enhancement Mode Power MOSFET Description The HM85P02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-20V,ID =-85A Schematic diagram RDS(ON)

 7.2. Size:430K  cn hmsemi
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HM85P02K

P-Channel Enhancement Mode Power MOSFET Description The HM85P02D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-20V,ID =-85A Schematic diagram RDS(ON)

 8.1. Size:684K  cn hmsemi
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HM85P02K

HM85P03K -30VDS 25VGS 85A(ID) P-Channel Enhancement Mode MOSFET Features Pin Description VDSS= -30V VGSS= 25V ID=85A RDS(ON)

Otros transistores... HM840F, HM85N02, HM85N02K, HM85N80, HM85N90, HM85N95D, HM85P02, HM85P02D, AO4407, HM8810A, HM8810S, HM8N20, HM8N20A, HM8N20I, HM8N20K, HM8N20KA, HM8N25K