HM85P02K MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HM85P02K
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 80 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 85 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 42 nS
Cossⓘ - Capacitancia de salida: 577 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de MOSFET HM85P02K
Principales características: HM85P02K
hm85p02k.pdf
HM85P02K P-Channel Enhancement Mode Power MOSFET Description The HM85P02K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-20V,ID =-85A Schematic diagram RDS(ON)
hm85p02.pdf
HM85P02 P-Channel Enhancement Mode Power MOSFET Description The HM85P02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-20V,ID =-85A Schematic diagram RDS(ON)
hm85p02d.pdf
P-Channel Enhancement Mode Power MOSFET Description The HM85P02D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-20V,ID =-85A Schematic diagram RDS(ON)
hm85p03k.pdf
HM85P03K -30VDS 25VGS 85A(ID) P-Channel Enhancement Mode MOSFET Features Pin Description VDSS= -30V VGSS= 25V ID=85A RDS(ON)
Otros transistores... HM840F , HM85N02 , HM85N02K , HM85N80 , HM85N90 , HM85N95D , HM85P02 , HM85P02D , EMB04N03H , HM8810A , HM8810S , HM8N20 , HM8N20A , HM8N20I , HM8N20K , HM8N20KA , HM8N25K .
History: VBA5415 | JBL102Y
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