HM85P02K Spec and Replacement
Type Designator: HM85P02K
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 80 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 85 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 42 nS
Cossⓘ - Output Capacitance: 577 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: TO252
HM85P02K Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HM85P02K Specs
hm85p02k.pdf
HM85P02K P-Channel Enhancement Mode Power MOSFET Description The HM85P02K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-20V,ID =-85A Schematic diagram RDS(ON) ... See More ⇒
hm85p02.pdf
HM85P02 P-Channel Enhancement Mode Power MOSFET Description The HM85P02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-20V,ID =-85A Schematic diagram RDS(ON) ... See More ⇒
hm85p02d.pdf
P-Channel Enhancement Mode Power MOSFET Description The HM85P02D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-20V,ID =-85A Schematic diagram RDS(ON) ... See More ⇒
hm85p03k.pdf
HM85P03K -30VDS 25VGS 85A(ID) P-Channel Enhancement Mode MOSFET Features Pin Description VDSS= -30V VGSS= 25V ID=85A RDS(ON) ... See More ⇒
Detailed specifications: HM840F , HM85N02 , HM85N02K , HM85N80 , HM85N90 , HM85N95D , HM85P02 , HM85P02D , EMB04N03H , HM8810A , HM8810S , HM8N20 , HM8N20A , HM8N20I , HM8N20K , HM8N20KA , HM8N25K .
History: IPP60R190P6 | AP02N90JB
Keywords - HM85P02K MOSFET specs
HM85P02K cross reference
HM85P02K equivalent finder
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: IPP60R190P6 | AP02N90JB
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