HM8N20A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HM8N20A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 55 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 11 nS
Cossⓘ - Capacitancia de salida: 90 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de MOSFET HM8N20A
Principales características: HM8N20A
hm8n20a.pdf
HM8N20A N-Channel Enhancement Mode Power MOSFET Description The HM8N20A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =8A RDS(ON)
hm8n20ka.pdf
HM8N20KA N-Channel Enhancement Mode Power MOSFET Description The HM8N20KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =8A RDS(ON)
hm8n20i.pdf
N-Channel Enhancement Mode Power MOSFET Description The HM8N20I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =8A RDS(ON)
hm8n20.pdf
HM8N20 N-Channel Enhancement Mode Power MOSFET Description The HM8N20 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =8A RDS(ON)
Otros transistores... HM85N90 , HM85N95D , HM85P02 , HM85P02D , HM85P02K , HM8810A , HM8810S , HM8N20 , AO4407A , HM8N20I , HM8N20K , HM8N20KA , HM8N25K , HM8P02MR , HM90N04D , HM90N06D , HM9435 .
History: VBA5415 | JBL102Y
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