All MOSFET. HM8N20A Datasheet

 

HM8N20A Datasheet and Replacement


   Type Designator: HM8N20A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO220
 

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HM8N20A Datasheet (PDF)

 ..1. Size:626K  cn hmsemi
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HM8N20A

HM8N20AN-Channel Enhancement Mode Power MOSFET Description The HM8N20A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =8A RDS(ON)

 8.1. Size:908K  cn hmsemi
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HM8N20A

HM8N20KAN-Channel Enhancement Mode Power MOSFET Description The HM8N20KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =8A RDS(ON)

 8.2. Size:559K  cn hmsemi
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HM8N20A

N-Channel Enhancement Mode Power MOSFET Description The HM8N20I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =8A RDS(ON)

 8.3. Size:611K  cn hmsemi
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HM8N20A

HM8N20N-Channel Enhancement Mode Power MOSFET Description The HM8N20 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =8A RDS(ON)

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Datasheet: HM85N90 , HM85N95D , HM85P02 , HM85P02D , HM85P02K , HM8810A , HM8810S , HM8N20 , AO3407 , HM8N20I , HM8N20K , HM8N20KA , HM8N25K , HM8P02MR , HM90N04D , HM90N06D , HM9435 .

History: PE532DY | OSG60R1K8PF

Keywords - HM8N20A MOSFET datasheet

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