HM8N20A Datasheet. Specs and Replacement

Type Designator: HM8N20A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 55 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: TO220

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HM8N20A datasheet

 ..1. Size:626K  cn hmsemi
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HM8N20A

HM8N20A N-Channel Enhancement Mode Power MOSFET Description The HM8N20A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =8A RDS(ON) ... See More ⇒

 8.1. Size:908K  cn hmsemi
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HM8N20A

HM8N20KA N-Channel Enhancement Mode Power MOSFET Description The HM8N20KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =8A RDS(ON) ... See More ⇒

 8.2. Size:559K  cn hmsemi
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HM8N20A

N-Channel Enhancement Mode Power MOSFET Description The HM8N20I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =8A RDS(ON) ... See More ⇒

 8.3. Size:611K  cn hmsemi
 hm8n20.pdf pdf_icon

HM8N20A

HM8N20 N-Channel Enhancement Mode Power MOSFET Description The HM8N20 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =8A RDS(ON) ... See More ⇒

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Detailed specifications: HM85N90, HM85N95D, HM85P02, HM85P02D, HM85P02K, HM8810A, HM8810S, HM8N20, IRF830, HM8N20I, HM8N20K, HM8N20KA, HM8N25K, HM8P02MR, HM90N04D, HM90N06D, HM9435

Keywords - HM8N20A MOSFET specs

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