HMS100N85D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HMS100N85D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 85 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 12.5 nS
   Cossⓘ - Capacitancia de salida: 648 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0053 Ohm
   Paquete / Cubierta: DFN5X6-8L

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HMS100N85D Datasheet (PDF)

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hms100n85d.pdf

N-Channel Super Trench Power MOSFET Description The HMS100N85D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectif

9.1. Size:979K cn hmsemi
hms10n60k hms10n60i.pdf

HMS10N60K/HMS10N60IHMS10N60K/HMS10N60I600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using H&M Semis - 10A, 600V, RDS(on) typ. = 0.42@VGS = 10 VAdvanced Super-Junction technology. - Low gate charge ( typical 35nC)This advanced technology has been especially tailored - High ruggednessto minimize conduction loss, provide superior switching - Fast

9.2. Size:446K cn hmsemi
hms105n10d.pdf

N-Channel Super Trench Power MOSFET Description The HMS105N10D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectif

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