HMS100N85D Datasheet. Specs and Replacement

Type Designator: HMS100N85D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12.5 nS

Cossⓘ - Output Capacitance: 648 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0053 Ohm

Package: DFN5X6-8L

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HMS100N85D datasheet

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HMS100N85D

N-Channel Super Trench Power MOSFET Description The HMS100N85D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectif... See More ⇒

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HMS100N85D

HMS10N60K/HMS10N60I HMS10N60K/HMS10N60I 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using H&M Semi s - 10A, 600V, RDS(on) typ. = 0.42 @VGS = 10 V Advanced Super-Junction technology. - Low gate charge ( typical 35nC) This advanced technology has been especially tailored - High ruggedness to minimize conduction loss, provide superior switching - Fast... See More ⇒

 9.2. Size:446K  cn hmsemi
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HMS100N85D

N-Channel Super Trench Power MOSFET Description The HMS105N10D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectif... See More ⇒

Detailed specifications: HM90N06D, HM9435, HM9435A, HM9435B, HM9436, HM9926, HM9926B, HM9N90F, IRFP460, HMS105N10D, HMS10N60I, HMS10N60K, HMS110N15, HMS11N60, HMS11N60D, HMS11N60F, HMS11N60I

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