HMS10N60I MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Principales características: HMS10N60I

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HMS10N60K/HMS10N60I HMS10N60K/HMS10N60I 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using H&M Semi s - 10A, 600V, RDS(on) typ. = 0.42 @VGS = 10 V Advanced Super-Junction technology. - Low gate charge ( typical 35nC) This advanced technology has been especially tailored - High ruggedness to minimize conduction loss, provide superior switching - Fast

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N-Channel Super Trench Power MOSFET Description The HMS105N10D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectif

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N-Channel Super Trench Power MOSFET Description The HMS100N85D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectif

Otros transistores... HM9435A , HM9435B , HM9436 , HM9926 , HM9926B , HM9N90F , HMS100N85D , HMS105N10D , IRLZ44N , HMS10N60K , HMS110N15 , HMS11N60 , HMS11N60D , HMS11N60F , HMS11N60I , HMS11N60K , HMS11N65 .