HMS10N60I MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

HMS10N60I Datasheet (PDF)

..1. Size:979K cn hmsemi
hms10n60k hms10n60i.pdf pdf_icon

HMS10N60K/HMS10N60IHMS10N60K/HMS10N60I600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using H&M Semis - 10A, 600V, RDS(on) typ. = 0.42@VGS = 10 VAdvanced Super-Junction technology. - Low gate charge ( typical 35nC)This advanced technology has been especially tailored - High ruggednessto minimize conduction loss, provide superior switching - Fast

9.1. Size:446K cn hmsemi
hms105n10d.pdf pdf_icon

N-Channel Super Trench Power MOSFET Description The HMS105N10D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectif

9.2. Size:483K cn hmsemi
hms100n85d.pdf pdf_icon

N-Channel Super Trench Power MOSFET Description The HMS100N85D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectif

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .