HMS10N60I Datasheet. Specs and Replacement
Type Designator: HMS10N60I 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 120 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.46 Ohm
Package: DPAK
HMS10N60I substitution
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HMS10N60I datasheet
hms10n60k hms10n60i.pdf
HMS10N60K/HMS10N60I HMS10N60K/HMS10N60I 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using H&M Semi s - 10A, 600V, RDS(on) typ. = 0.42 @VGS = 10 V Advanced Super-Junction technology. - Low gate charge ( typical 35nC) This advanced technology has been especially tailored - High ruggedness to minimize conduction loss, provide superior switching - Fast... See More ⇒
hms105n10d.pdf
N-Channel Super Trench Power MOSFET Description The HMS105N10D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectif... See More ⇒
hms100n85d.pdf
N-Channel Super Trench Power MOSFET Description The HMS100N85D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectif... See More ⇒
Detailed specifications: HM9435A, HM9435B, HM9436, HM9926, HM9926B, HM9N90F, HMS100N85D, HMS105N10D, IRLZ44N, HMS10N60K, HMS110N15, HMS11N60, HMS11N60D, HMS11N60F, HMS11N60I, HMS11N60K, HMS11N65
Keywords - HMS10N60I MOSFET specs
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