HMS11N70B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HMS11N70B
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 83 W
Voltaje máximo drenador - fuente |Vds|: 700 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 11 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4.5 V
Carga de la puerta (Qg): 38 nC
Tiempo de subida (tr): 60 nS
Conductancia de drenaje-sustrato (Cd): 140 pF
Resistencia entre drenaje y fuente RDS(on): 0.45 Ohm
Paquete / Cubierta: TO262
Búsqueda de reemplazo de MOSFET HMS11N70B
HMS11N70B Datasheet (PDF)
hms11n70d hms11n70k hms11n70f hms11n70b hms11n70 hms11n70i.pdf
HMS11N70K,HMS11N70I,HMS11N70HMS11N70F,HMS11N70D,HMS11N70B700V N-Channel MOSFETFeaturesGeneral DescriptionFeatures -11A, 700V, RDS(on) typ.= 0.4@VGS = 10 VThis Power MOSFET is produced using H&M SemisAdvanced Super-Junction technology. - Low gate charge ( typical 38nC) - 7.6A, 500V, RDS(on) typ. = 0.5@VGS = 10 VThis advanced technology has been especially tailored - High
hms11n60d hms11n60 hms11n60f.pdf
HMS11N60D,HMS11N60,HMS11N60FN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction 650 V VDS@Tjmaxtechnology and design to provide excellent RDS(ON) with low RDS(ON)MAX 360 m gate charge. This super junction MOSFET fits the industrys ID 11 AAC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial p
hms11n60k hms11n60i.pdf
HMS11N60K/HMS11N60IHMS11N60K/HMS11N60I600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using H&M Semis - 11A, 600V, RDS(on) typ. = 0.34@VGS = 10 VAdvanced Super-Junction technology. - Low gate charge ( typical 33nC)This advanced technology has been especially tailored - High ruggednessto minimize conduction loss, provide superior switching - Fast
hms11n65k hms11n65i.pdf
HMS11N65K/HMS11N65IHMS11N65K/HMS11N65I650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using H&M Semis - 11A, 650V, RDS(on) typ. = 0.38@VGS = 10 VAdvanced Super-Junction technology. - Low gate charge ( typical 33nC)This advanced technology has been especially tailored - High ruggednessto minimize conduction loss, provide superior switching - Fast
hms11n65i hms11n65k.pdf
HMS11N65I / HMS11N65KN-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 290 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 11.5 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri
hms11n65 hms11n65d hms11n65f.pdf
HMS11N65/ HMS11N65F/HMS11N65DGeneral Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON)MAX 360 m gate charge. This super junction MOSFET fits the industrys ID 11 AAC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features New technology
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: LSF60R380HT
