HMS11N70B Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HMS11N70B  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 83 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 11 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

|VGSth|ⓘ - Tensión umbral entre puerta y fuente: 4.5 V

Qgⓘ - Carga de la puerta: 38 nC

trⓘ - Tiempo de subida: 60 nS

Cossⓘ - Capacitancia de salida: 140 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.45 Ohm

Encapsulados: TO262

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HMS11N70B datasheet

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 hms11n70d hms11n70k hms11n70f hms11n70b hms11n70 hms11n70i.pdf pdf_icon

HMS11N70B

HMS11N70K,HMS11N70I,HMS11N70 HMS11N70F,HMS11N70D,HMS11N70B 700V N-Channel MOSFET Features General Description Features -11A, 700V, RDS(on) typ.= 0.4 @VGS = 10 V This Power MOSFET is produced using H&M Semi s Advanced Super-Junction technology. - Low gate charge ( typical 38nC) - 7.6A, 500V, RDS(on) typ. = 0.5 @VGS = 10 V This advanced technology has been especially tailored - High

 8.1. Size:737K  cn hmsemi
 hms11n60d hms11n60 hms11n60f.pdf pdf_icon

HMS11N70B

HMS11N60D,HMS11N60,HMS11N60F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction 650 V VDS@Tjmax technology and design to provide excellent RDS(ON) with low RDS(ON)MAX 360 m gate charge. This super junction MOSFET fits the industry s ID 11 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial p

 8.2. Size:682K  cn hmsemi
 hms11n60k hms11n60i.pdf pdf_icon

HMS11N70B

HMS11N60K/HMS11N60I HMS11N60K/HMS11N60I 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using H&M Semi s - 11A, 600V, RDS(on) typ. = 0.34 @VGS = 10 V Advanced Super-Junction technology. - Low gate charge ( typical 33nC) This advanced technology has been especially tailored - High ruggedness to minimize conduction loss, provide superior switching - Fast

 8.3. Size:683K  cn hmsemi
 hms11n65k hms11n65i.pdf pdf_icon

HMS11N70B

HMS11N65K/HMS11N65I HMS11N65K/HMS11N65I 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using H&M Semi s - 11A, 650V, RDS(on) typ. = 0.38 @VGS = 10 V Advanced Super-Junction technology. - Low gate charge ( typical 33nC) This advanced technology has been especially tailored - High ruggedness to minimize conduction loss, provide superior switching - Fast

MOSTRAR MÁS

Otros transistores... HMS11N60I, HMS11N60K, HMS11N65, HMS11N65D, HMS11N65F, HMS11N65I, HMS11N65K, HMS11N70, IRFP250N, HMS11N70D, HMS11N70F, HMS11N70I, HMS11N70K, HMS120N03D, HMS150N04D, HMS150N06D, HMS15N60