HMS11N70B MOSFET Datasheet: N-Ch, 700V, 11A. Full specification with pinout and replacement list

HMS11N70B Specs and Replacement

Type Designator: HMS11N70B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 140 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm

Package: TO262

HMS11N70B substitution

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HMS11N70B datasheet

..1. Size:696K cn hmsemi
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HMS11N70K,HMS11N70I,HMS11N70 HMS11N70F,HMS11N70D,HMS11N70B 700V N-Channel MOSFET Features General Description Features -11A, 700V, RDS(on) typ.= 0.4 @VGS = 10 V This Power MOSFET is produced using H&M Semi s Advanced Super-Junction technology. - Low gate charge ( typical 38nC) - 7.6A, 500V, RDS(on) typ. = 0.5 @VGS = 10 V This advanced technology has been especially tailored - High... See More ⇒

8.1. Size:737K cn hmsemi
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HMS11N60D,HMS11N60,HMS11N60F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction 650 V VDS@Tjmax technology and design to provide excellent RDS(ON) with low RDS(ON)MAX 360 m gate charge. This super junction MOSFET fits the industry s ID 11 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial p... See More ⇒

8.2. Size:682K cn hmsemi
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HMS11N60K/HMS11N60I HMS11N60K/HMS11N60I 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using H&M Semi s - 11A, 600V, RDS(on) typ. = 0.34 @VGS = 10 V Advanced Super-Junction technology. - Low gate charge ( typical 33nC) This advanced technology has been especially tailored - High ruggedness to minimize conduction loss, provide superior switching - Fast... See More ⇒

8.3. Size:683K cn hmsemi
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HMS11N65K/HMS11N65I HMS11N65K/HMS11N65I 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using H&M Semi s - 11A, 650V, RDS(on) typ. = 0.38 @VGS = 10 V Advanced Super-Junction technology. - Low gate charge ( typical 33nC) This advanced technology has been especially tailored - High ruggedness to minimize conduction loss, provide superior switching - Fast... See More ⇒