FDMC8200 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDMC8200  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.9 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 18 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm

Encapsulados: MLP

 Búsqueda de reemplazo de FDMC8200 MOSFET

- Selecciónⓘ de transistores por parámetros

 

FDMC8200 datasheet

 ..1. Size:479K  fairchild semi
 fdmc8200.pdf pdf_icon

FDMC8200

June 2009 FDMC8200 Dual N-Channel PowerTrench MOSFET 30 V, 9.5 m and 20 m Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a dual Power33 (3mm x 3mm MLP) package. The switch node Max rDS(on) = 20 m at VGS = 10 V, ID = 6 A has been internally connected to enable easy placement and Max rDS(on) = 32 m at VGS = 4.5 V,

 0.1. Size:461K  fairchild semi
 fdmc8200s.pdf pdf_icon

FDMC8200

March 2011 FDMC8200S Dual N-Channel PowerTrench MOSFET 30 V, 10 m , 20 m Features General Description This device includes two specialized N-Channel MOSFETs in a Q1 N-Channel due power33(3mm X 3mm MLP) package. The switch node has Max rDS(on) = 20 m at VGS = 10 V, ID = 6 A been internally connected to enable easy placement and routing of synchronous buck converters. The

 0.2. Size:479K  onsemi
 fdmc8200s.pdf pdf_icon

FDMC8200

FDMC8200S Dual N-Channel PowerTrench MOSFET 30 V, 10 m , 20 m General Description This device includes two specialized N-Channel MOSFETs in a Features due power33(3mm X 3mm MLP) package. The switch node has been internally connected to enable easy placement and routing Q1 N-Channel of synchronous buck converters. The control MOSFET (Q1) and Max rDS(on) = 20 m at VGS = 10

 8.1. Size:353K  fairchild semi
 fdmc8296.pdf pdf_icon

FDMC8200

Electrical Characteristics TJ = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 A, VGS = 0V 30 V BVDSS Breakdown Voltage Temperature ID = 250 A, referenced to 25 C 17 mV/ C TJ Coefficient VDS = 24V, 1 IDSS Zero Gate Voltage Drain Current A VGS = 0V, TJ = 125 C 250 IGSS Gate t

MOSTRAR MÁS

Otros transistores... STS2301, FDMC7692S, STS2300S, FDMC7696, STS126, FDMC8015L, FDMC8026S, STP80L60, IRF540N, STP70L60, FDMC8200S, STP656F, FDMC8462, FDMC8554, FDMC86102, STP652F, FDMC86102L