Справочник MOSFET. FDMC8200

 

FDMC8200 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDMC8200
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1.9 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 18 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.02 Ohm
   Тип корпуса: MLP

 Аналог (замена) для FDMC8200

 

 

FDMC8200 Datasheet (PDF)

 ..1. Size:479K  fairchild semi
 fdmc8200.pdf

FDMC8200 FDMC8200

June 2009FDMC8200Dual N-Channel PowerTrench MOSFET 30 V, 9.5 m and 20 mFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual Power33 (3mm x 3mm MLP) package. The switch node Max rDS(on) = 20 m at VGS = 10 V, ID = 6 Ahas been internally connected to enable easy placement and Max rDS(on) = 32 m at VGS = 4.5 V,

 0.1. Size:461K  fairchild semi
 fdmc8200s.pdf

FDMC8200 FDMC8200

March 2011FDMC8200SDual N-Channel PowerTrench MOSFET 30 V, 10 m, 20 m Features General DescriptionThis device includes two specialized N-Channel MOSFETs in a Q1: N-Channeldue power33(3mm X 3mm MLP) package. The switch node has Max rDS(on) = 20 m at VGS = 10 V, ID = 6 Abeen internally connected to enable easy placement and routing of synchronous buck converters. The

 0.2. Size:479K  onsemi
 fdmc8200s.pdf

FDMC8200 FDMC8200

FDMC8200SDual N-Channel PowerTrench MOSFET30 V, 10 m, 20 m General DescriptionThis device includes two specialized N-Channel MOSFETs in a Featuresdue power33(3mm X 3mm MLP) package. The switch node has been internally connected to enable easy placement and routing Q1: N-Channelof synchronous buck converters. The control MOSFET (Q1) and Max rDS(on) = 20 m at VGS = 10

 8.1. Size:353K  fairchild semi
 fdmc8296.pdf

FDMC8200 FDMC8200

Electrical Characteristics TJ = 25C unless otherwise notedSymbol Parameter Test Conditions Min Typ Max UnitsOff CharacteristicsBVDSS Drain to Source Breakdown Voltage ID = 250 A, VGS = 0V 30 V BVDSS Breakdown Voltage TemperatureID = 250 A, referenced to 25C 17 mV/C TJ CoefficientVDS = 24V, 1IDSS Zero Gate Voltage Drain Current AVGS = 0V, TJ = 125C 250IGSS Gate t

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