FDMC8200 - аналоги, параметры транзистора - Справочник транзисторов

FDMC8200 даташит

..1. Size:479K fairchild semi
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June 2009 FDMC8200 Dual N-Channel PowerTrench MOSFET 30 V, 9.5 m and 20 m Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a dual Power33 (3mm x 3mm MLP) package. The switch node Max rDS(on) = 20 m at VGS = 10 V, ID = 6 A has been internally connected to enable easy placement and Max rDS(on) = 32 m at VGS = 4.5 V,

0.1. Size:461K fairchild semi
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March 2011 FDMC8200S Dual N-Channel PowerTrench MOSFET 30 V, 10 m , 20 m Features General Description This device includes two specialized N-Channel MOSFETs in a Q1 N-Channel due power33(3mm X 3mm MLP) package. The switch node has Max rDS(on) = 20 m at VGS = 10 V, ID = 6 A been internally connected to enable easy placement and routing of synchronous buck converters. The

0.2. Size:479K onsemi
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FDMC8200S Dual N-Channel PowerTrench MOSFET 30 V, 10 m , 20 m General Description This device includes two specialized N-Channel MOSFETs in a Features due power33(3mm X 3mm MLP) package. The switch node has been internally connected to enable easy placement and routing Q1 N-Channel of synchronous buck converters. The control MOSFET (Q1) and Max rDS(on) = 20 m at VGS = 10

8.1. Size:353K fairchild semi
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Electrical Characteristics TJ = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 A, VGS = 0V 30 V BVDSS Breakdown Voltage Temperature ID = 250 A, referenced to 25 C 17 mV/ C TJ Coefficient VDS = 24V, 1 IDSS Zero Gate Voltage Drain Current A VGS = 0V, TJ = 125 C 250 IGSS Gate t

Другие MOSFET... STS2301 , FDMC7692S , STS2300S , FDMC7696 , STS126 , FDMC8015L , FDMC8026S , STP80L60 , IRF540N , STP70L60 , FDMC8200S , STP656F , FDMC8462 , FDMC8554 , FDMC86102 , STP652F , FDMC86102L .