HMS21N60 Todos los transistores

 

HMS21N60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HMS21N60
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 200 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 21 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 6 nS
   Cossⓘ - Capacitancia de salida: 150 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm
   Paquete / Cubierta: TO220
 

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HMS21N60 Datasheet (PDF)

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HMS21N60

HMS21N60,HMS21N60FN-Channel Super Junction Power MOSFET II General Description The series of devices use advanced super junction 650 V VDS@Tjmaxtechnology and design to provide excellent RDS(ON) with low RDS(ON) MAX 180 m gate charge. This super junction MOSFET fits the industrys ID 21 A AC-DC SMPS requirements for PFC, AC/DC powerconversion, and industrial power applica

 0.1. Size:978K  cn hmsemi
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HMS21N60

HMS21N60AN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction 650 V VDS@Tjmaxtechnology and design to provide excellent RDS(ON) with low RDS(ON) MAX 180 m gate charge. This super junction MOSFET fits the industrys ID 21 AAC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. F

 7.1. Size:779K  cn hmsemi
 hms21n65a.pdf pdf_icon

HMS21N60

HMS21N65AN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 180 m gate charge. This super junction MOSFET fits the industrys ID 21 AAC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features

 7.2. Size:817K  cn hmsemi
 hms21n65 hms21n65f.pdf pdf_icon

HMS21N60

HMS21N65,HMS21N65FN-Channel Super Junction Power MOSFET II General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 180 m gate charge. This super junction MOSFET fits the industrys ID 21 AAC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications

MOSTRAR MÁS

Otros transistores... HMS17N65D , HMS17N65F , HMS18N10D , HMS18N10Q , HMS18N80 , HMS18N80F , HMS200N04D , HMS20N15K , STF13NM60N , HMS21N60A , HMS21N60F , HMS21N65 , HMS21N65A , HMS21N65F , HMS21N70 , HMS21N70A , HMS21N70F .

 

 
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