Справочник MOSFET. HMS21N60

 

HMS21N60 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: HMS21N60
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 200 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 21 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 6 ns
   Cossⓘ - Выходная емкость: 150 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.18 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для HMS21N60

   - подбор ⓘ MOSFET транзистора по параметрам

 

HMS21N60 Datasheet (PDF)

 ..1. Size:1054K  cn hmsemi
hms21n60 hms21n60f.pdfpdf_icon

HMS21N60

HMS21N60,HMS21N60FN-Channel Super Junction Power MOSFET II General Description The series of devices use advanced super junction 650 V VDS@Tjmaxtechnology and design to provide excellent RDS(ON) with low RDS(ON) MAX 180 m gate charge. This super junction MOSFET fits the industrys ID 21 A AC-DC SMPS requirements for PFC, AC/DC powerconversion, and industrial power applica

 0.1. Size:978K  cn hmsemi
hms21n60a.pdfpdf_icon

HMS21N60

HMS21N60AN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction 650 V VDS@Tjmaxtechnology and design to provide excellent RDS(ON) with low RDS(ON) MAX 180 m gate charge. This super junction MOSFET fits the industrys ID 21 AAC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. F

 7.1. Size:779K  cn hmsemi
hms21n65a.pdfpdf_icon

HMS21N60

HMS21N65AN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 180 m gate charge. This super junction MOSFET fits the industrys ID 21 AAC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features

 7.2. Size:817K  cn hmsemi
hms21n65 hms21n65f.pdfpdf_icon

HMS21N60

HMS21N65,HMS21N65FN-Channel Super Junction Power MOSFET II General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 180 m gate charge. This super junction MOSFET fits the industrys ID 21 AAC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications

Другие MOSFET... HMS17N65D , HMS17N65F , HMS18N10D , HMS18N10Q , HMS18N80 , HMS18N80F , HMS200N04D , HMS20N15K , STF13NM60N , HMS21N60A , HMS21N60F , HMS21N65 , HMS21N65A , HMS21N65F , HMS21N70 , HMS21N70A , HMS21N70F .

History: STF32N65M5 | IXTH90P10P | 2SK1206

 

 
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