HMS4444A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HMS4444A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 3.5 W
Voltaje máximo drenador - fuente |Vds|: 80 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 17 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4.5 V
Carga de la puerta (Qg): 67 nC
Tiempo de subida (tr): 5 nS
Conductancia de drenaje-sustrato (Cd): 680 pF
Resistencia entre drenaje y fuente RDS(on): 0.0068 Ohm
Paquete / Cubierta: SOP8
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HMS4444A Datasheet (PDF)
hms4444a.pdf
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HMS4444AN-Channel Super Trench Power MOSFET Description The HMS4444A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) ghigh-frequency switching and synchronous rectif
hms4438.pdf
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HMS4438N-Channel Super Trench Power MOSFET Description The HMS4438 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) ghigh-frequency switching and synchronous rectifi
hms4454.pdf
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HMS4454N-Channel Super Trench Power MOSFET Description The HMS4454 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectificatio
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