HMS4444A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: HMS4444A
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 3.5 W
Предельно допустимое напряжение сток-исток |Uds|: 80 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4.5 V
Максимально допустимый постоянный ток стока |Id|: 17 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 67 nC
Время нарастания (tr): 5 ns
Выходная емкость (Cd): 680 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0068 Ohm
Тип корпуса: SOP8
HMS4444A Datasheet (PDF)
hms4444a.pdf
HMS4444AN-Channel Super Trench Power MOSFET Description The HMS4444A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) ghigh-frequency switching and synchronous rectif
hms4438.pdf
HMS4438N-Channel Super Trench Power MOSFET Description The HMS4438 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) ghigh-frequency switching and synchronous rectifi
hms4454.pdf
HMS4454N-Channel Super Trench Power MOSFET Description The HMS4454 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectificatio
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