FDMC86102 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDMC86102
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 41 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 13 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.024 Ohm
   Paquete / Cubierta: POWER33

Búsqueda de reemplazo de MOSFET FDMC86102

FDMC86102 Datasheet (PDF)

..1. Size:344K fairchild semi
fdmc86102.pdf

July 2009FDMC86102N-Channel Power Trench MOSFET 100 V, 20 A, 24 mFeatures General Description Max rDS(on) = 24 m at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 38 m at VGS = 6 V, ID = 5 Abeen especially tailored to minimize the on-state resistance and Low Profile -

..2. Size:464K onsemi
fdmc86102.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

0.1. Size:313K fairchild semi
fdmc86102l.pdf

December 2010FDMC86102LN-Channel Power Trench MOSFET 100 V, 18 A, 23 mFeatures General Description Max rDS(on) = 23 m at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 34 m at VGS = 4.5 V, ID = 5.5 Abeen especially tailored to minimize the on-state resistance and Low Prof

0.2. Size:260K fairchild semi
fdmc86102lz.pdf

April 2011FDMC86102LZN-Channel Power Trench MOSFET 100 V, 22 A, 24 mFeatures General Description Max rDS(on) = 24 m at VGS = 10 V, ID = 6.5 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process Max rDS(on) = 35 m at VGS = 4.5 V, ID = 5.5 Athat has been special tailored to minimize the on-state HBM ESD prot

0.3. Size:488K onsemi
fdmc86102l.pdf

Otros transistores... FDMC8026S , STP80L60 , FDMC8200 , STP70L60 , FDMC8200S , STP656F , FDMC8462 , FDMC8554 , IRFZ44 , STP652F , FDMC86102L , STP60L60F , FDMC86102LZ , STP60L60A , FDMC86106LZ , STP60L60 , FDMC8622 .

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