FDMC86102 PDF and Equivalents Search

 

FDMC86102 Specs and Replacement

Type Designator: FDMC86102

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 41 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm

Package: POWER33

FDMC86102 substitution

- MOSFET ⓘ Cross-Reference Search

 

FDMC86102 datasheet

 ..1. Size:344K  fairchild semi
fdmc86102.pdf pdf_icon

FDMC86102

July 2009 FDMC86102 N-Channel Power Trench MOSFET 100 V, 20 A, 24 m Features General Description Max rDS(on) = 24 m at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 38 m at VGS = 6 V, ID = 5 A been especially tailored to minimize the on-state resistance and Low Profile - ... See More ⇒

 ..2. Size:464K  onsemi
fdmc86102.pdf pdf_icon

FDMC86102

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 0.1. Size:313K  fairchild semi
fdmc86102l.pdf pdf_icon

FDMC86102

December 2010 FDMC86102L N-Channel Power Trench MOSFET 100 V, 18 A, 23 m Features General Description Max rDS(on) = 23 m at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 34 m at VGS = 4.5 V, ID = 5.5 A been especially tailored to minimize the on-state resistance and Low Prof... See More ⇒

 0.2. Size:260K  fairchild semi
fdmc86102lz.pdf pdf_icon

FDMC86102

April 2011 FDMC86102LZ N-Channel Power Trench MOSFET 100 V, 22 A, 24 m Features General Description Max rDS(on) = 24 m at VGS = 10 V, ID = 6.5 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor s advanced Power Trench process Max rDS(on) = 35 m at VGS = 4.5 V, ID = 5.5 A that has been special tailored to minimize the on-state HBM ESD prot... See More ⇒

Detailed specifications: FDMC8026S, STP80L60, FDMC8200, STP70L60, FDMC8200S, STP656F, FDMC8462, FDMC8554, IRF1404, STP652F, FDMC86102L, STP60L60F, FDMC86102LZ, STP60L60A, FDMC86106LZ, STP60L60, FDMC8622

Keywords - FDMC86102 MOSFET specs

 FDMC86102 cross reference

 FDMC86102 equivalent finder

 FDMC86102 pdf lookup

 FDMC86102 substitution

 FDMC86102 replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

↑ Back to Top
.