FDMC86102L Todos los transistores

 

FDMC86102L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDMC86102L

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 41 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 18 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 3 V

Carga de compuerta (Qg): 15 nC

Resistencia drenaje-fuente RDS(on): 0.023 Ohm

Empaquetado / Estuche: POWER33

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FDMC86102L Datasheet (PDF)

1.1. fdmc86102.pdf Size:344K _fairchild_semi

FDMC86102L
FDMC86102L

July 2009 FDMC86102 N-Channel Power Trench MOSFET 100 V, 20 A, 24 m? Features General Description Max rDS(on) = 24 m? at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 38 m? at VGS = 6 V, ID = 5 A been especially tailored to minimize the on-state resistance and Low Profile - 1 mm max in P

1.2. fdmc86102lz.pdf Size:260K _fairchild_semi

FDMC86102L
FDMC86102L

April 2011 FDMC86102LZ N-Channel Power Trench MOSFET 100 V, 22 A, 24 m? Features General Description Max rDS(on) = 24 m? at VGS = 10 V, ID = 6.5 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process Max rDS(on) = 35 m? at VGS = 4.5 V, ID = 5.5 A that has been special tailored to minimize the on-state HBM ESD protection lev

 1.3. fdmc86102l.pdf Size:313K _fairchild_semi

FDMC86102L
FDMC86102L

December 2010 FDMC86102L N-Channel Power Trench MOSFET 100 V, 18 A, 23 m? Features General Description Max rDS(on) = 23 m? at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 34 m? at VGS = 4.5 V, ID = 5.5 A been especially tailored to minimize the on-state resistance and Low Profile - 1 mm

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