FDMC86102L MOSFET Datasheet: N-Ch, 100V, 18A. Full specification with pinout and replacement list

FDMC86102L Specs and Replacement

   Type Designator: FDMC86102L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 41 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: POWER33

FDMC86102L substitution

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FDMC86102L datasheet

..1. Size:313K fairchild semi
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December 2010 FDMC86102L N-Channel Power Trench MOSFET 100 V, 18 A, 23 m Features General Description Max rDS(on) = 23 m at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 34 m at VGS = 4.5 V, ID = 5.5 A been especially tailored to minimize the on-state resistance and Low Prof... See More ⇒

..2. Size:488K onsemi
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

0.1. Size:260K fairchild semi
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April 2011 FDMC86102LZ N-Channel Power Trench MOSFET 100 V, 22 A, 24 m Features General Description Max rDS(on) = 24 m at VGS = 10 V, ID = 6.5 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor s advanced Power Trench process Max rDS(on) = 35 m at VGS = 4.5 V, ID = 5.5 A that has been special tailored to minimize the on-state HBM ESD prot... See More ⇒

5.1. Size:344K fairchild semi
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July 2009 FDMC86102 N-Channel Power Trench MOSFET 100 V, 20 A, 24 m Features General Description Max rDS(on) = 24 m at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 38 m at VGS = 6 V, ID = 5 A been especially tailored to minimize the on-state resistance and Low Profile - ... See More ⇒