HMS8N60 Todos los transistores

 

HMS8N60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HMS8N60
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 80 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 3.5 nS
   Cossⓘ - Capacitancia de salida: 58 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.54 Ohm
   Paquete / Cubierta: TO220
 

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HMS8N60 Datasheet (PDF)

 ..1. Size:975K  cn hmsemi
 hms8n60 hms8n60f hms8n60d.pdf pdf_icon

HMS8N60

HMS8N60D, HMS8N60, HMS8N60FN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS@Tjmax 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 540 m gate charge. This super junction MOSFET fits the industrys ID 8 A AC-DC SMPS requirements for PFC, AC/DC powerconversion, and industrial power

 0.1. Size:757K  cn hmsemi
 hms8n60k hms8n60i.pdf pdf_icon

HMS8N60

HMS8N60I, HMS8N60KN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS@Tjmax 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 540 m gate charge. This super junction MOSFET fits the industrys ID 8 A AC-DC SMPS requirements for PFC, AC/DC powerconversion, and industrial power applicati

 8.1. Size:933K  cn hmsemi
 hms8n65 hms8n65f hms8n65d.pdf pdf_icon

HMS8N60

HMS8N65D, HMS8N65, HMS8N65FN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 540 m gate charge. This super junction MOSFET fits the industrys ID 8 A AC-DC SMPS requirements for PFC, AC/DC powerconversion, and industrial power applic

 8.2. Size:797K  cn hmsemi
 hms8n65k hms8n65i.pdf pdf_icon

HMS8N60

HMS8N65I, HMS8N65KN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 540 m gate charge. This super junction MOSFET fits the industrys ID 8 A AC-DC SMPS requirements for PFC, AC/DC powerconversion, and industrial power applications.

MOSTRAR MÁS

Otros transistores... HMS80N10KA , HMS80N85 , HMS80N85D , HMS85N03ED , HMS85N95 , HMS85N95D , HMS8N50I , HMS8N50K , 12N60 , HMS8N60D , HMS8N60F , HMS8N60I , HMS8N60K , HMS8N65 , HMS8N65D , HMS8N65F , HMS8N65I .

History: SSD9435 | 2SK2311 | NP88N055EHE | DMN26D0UT

 

 
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