Справочник MOSFET. HMS8N60

 

HMS8N60 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: HMS8N60
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 80 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 8 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 3.5 ns
   Cossⓘ - Выходная емкость: 58 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.54 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для HMS8N60

   - подбор ⓘ MOSFET транзистора по параметрам

 

HMS8N60 Datasheet (PDF)

 ..1. Size:975K  cn hmsemi
 hms8n60 hms8n60f hms8n60d.pdf pdf_icon

HMS8N60

HMS8N60D, HMS8N60, HMS8N60FN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS@Tjmax 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 540 m gate charge. This super junction MOSFET fits the industrys ID 8 A AC-DC SMPS requirements for PFC, AC/DC powerconversion, and industrial power

 0.1. Size:757K  cn hmsemi
 hms8n60k hms8n60i.pdf pdf_icon

HMS8N60

HMS8N60I, HMS8N60KN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS@Tjmax 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 540 m gate charge. This super junction MOSFET fits the industrys ID 8 A AC-DC SMPS requirements for PFC, AC/DC powerconversion, and industrial power applicati

 8.1. Size:933K  cn hmsemi
 hms8n65 hms8n65f hms8n65d.pdf pdf_icon

HMS8N60

HMS8N65D, HMS8N65, HMS8N65FN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 540 m gate charge. This super junction MOSFET fits the industrys ID 8 A AC-DC SMPS requirements for PFC, AC/DC powerconversion, and industrial power applic

 8.2. Size:797K  cn hmsemi
 hms8n65k hms8n65i.pdf pdf_icon

HMS8N60

HMS8N65I, HMS8N65KN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 540 m gate charge. This super junction MOSFET fits the industrys ID 8 A AC-DC SMPS requirements for PFC, AC/DC powerconversion, and industrial power applications.

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... HMS80N10KA , HMS80N85 , HMS80N85D , HMS85N03ED , HMS85N95 , HMS85N95D , HMS8N50I , HMS8N50K , 12N60 , HMS8N60D , HMS8N60F , HMS8N60I , HMS8N60K , HMS8N65 , HMS8N65D , HMS8N65F , HMS8N65I .

 

 
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