HMS8N60 datasheet, аналоги, основные параметры

Наименование производителя: HMS8N60  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 80 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 8 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

|VGSth|ⓘ - Пороговое напряжение включения: 3.5 V

Qg ⓘ - Общий заряд затвора: 14.5 nC

tr ⓘ - Время нарастания: 3.5 ns

Cossⓘ - Выходная емкость: 58 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.54 Ohm

Тип корпуса: TO220

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Аналог (замена) для HMS8N60

- подборⓘ MOSFET транзистора по параметрам

 

HMS8N60 даташит

 ..1. Size:975K  cn hmsemi
 hms8n60 hms8n60f hms8n60d.pdf pdf_icon

HMS8N60

HMS8N60D, HMS8N60, HMS8N60F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS@Tjmax 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 540 m gate charge. This super junction MOSFET fits the industry s ID 8 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power

 0.1. Size:757K  cn hmsemi
 hms8n60k hms8n60i.pdf pdf_icon

HMS8N60

HMS8N60I, HMS8N60K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS@Tjmax 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 540 m gate charge. This super junction MOSFET fits the industry s ID 8 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applicati

 8.1. Size:933K  cn hmsemi
 hms8n65 hms8n65f hms8n65d.pdf pdf_icon

HMS8N60

HMS8N65D, HMS8N65, HMS8N65F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 540 m gate charge. This super junction MOSFET fits the industry s ID 8 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applic

 8.2. Size:797K  cn hmsemi
 hms8n65k hms8n65i.pdf pdf_icon

HMS8N60

HMS8N65I, HMS8N65K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 540 m gate charge. This super junction MOSFET fits the industry s ID 8 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... HMS80N10KA, HMS80N85, HMS80N85D, HMS85N03ED, HMS85N95, HMS85N95D, HMS8N50I, HMS8N50K, STP75NF75, HMS8N60D, HMS8N60F, HMS8N60I, HMS8N60K, HMS8N65, HMS8N65D, HMS8N65F, HMS8N65I