AO3413L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AO3413L
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   Qgⓘ - Carga de la puerta: 6.1 nC
   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 72 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.097 Ohm
   Paquete / Cubierta: SOT23

Búsqueda de reemplazo de MOSFET AO3413L

AO3413L Datasheet (PDF)

..1. Size:192K 1
ao3413l.pdf

AO3413P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO3413/L uses advanced trench technology to VDS (V) = -20Vprovide excellent RDS(ON), low gate charge andID = -3 A (VGS = -4.5V)operation with gate voltages as low as 1.8V. ThisRDS(ON)

8.1. Size:456K aosemi
ao3413.pdf

AO341320V P-Channel MOSFETGeneral Description FeaturesGeneral Description FeaturesThe AO3413 uses advanced trench technology to VDS = -20VThe AO3413 uses advanced trench technology to VDS = -20Vprovide excellent RDS(ON), low gate charge and ID = -3A (VGS = -4.5V)provide excellent RDS(ON), low gate charge and ID = -3A (VGS = -4.5V)operation with gate voltages as low as 1.8V. This

8.2. Size:2287K kexin
ao3413-3.pdf

SMD Type MOSFETP-Channel MOSFETAO3413 (KO3413)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.13 Features VDS (V) =-20V ID =-3 A (VGS =-4.5V)1 2 RDS(ON) 80m (VGS =-4.5V)+0.02+0.10.15 -0.020.95 -0.1 RDS(ON) 100m (VGS =-2.5V) +0.11.9-0.2 RDS(ON) 130m (VGS =-1.8V)1. Gate2. SourceDD3. DrainGGSS Absolute

8.3. Size:2128K kexin
ao3413.pdf

SMD Type MOSFETP-Channel MOSFETAO3413 (KO3413)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.1 Features3 VDS (V) =-20V ID =-3 A (VGS =-4.5V) RDS(ON) 80m (VGS =-4.5V)1 2+0.10.95-0.1 0.1+0.05-0.01 RDS(ON) 100m (VGS =-2.5V)+0.11.9-0.1 RDS(ON) 130m (VGS =-1.8V)1. GateDD2. Source3. DrainGGSS Absolute Maxim

8.4. Size:356K umw-ic
ao3413a.pdf

RUMWUMW AO3413A20V P-Channel MOSFETSOT23 General DescriptionGeneral DescriptionThe AO3413 uses advanced trench technology toThe AO3413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and provide excellent RDS(ON), low gate charge andoperation with gate voltages as low as 1.8V. Thisoperation with gate voltages as low as 1.8V. This device

8.5. Size:747K cn shikues
ao3413.pdf

AO3413P-Channel Enhancement Mode MOSFETFeatureDS(ON) GS -20V/-3A, R = 120m(MAX) @V = -4.5V.DS(ON) GS R = 150m(MAX) @V = -2.5V. DS(ON) Super High dense cell design for extremely low R3 Reliable and Rugged SC-59 for Surface Mount PackageSC-59 1 2 Applications1 Gate 2 Source 3 Drain Power Management Portable Equipment and Battery Powered Sy

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SI4490DY | NVJD4401N

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