FDMC86106LZ Todos los transistores

 

FDMC86106LZ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDMC86106LZ
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 19 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.2 V
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.103 Ohm
   Paquete / Cubierta: POWER33
 

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FDMC86106LZ Datasheet (PDF)

 ..1. Size:318K  fairchild semi
 fdmc86106lz.pdf pdf_icon

FDMC86106LZ

December 2010FDMC86106LZN-Channel Power Trench MOSFET 100 V, 7.5 A, 103 mFeatures General Description Max rDS(on) = 103 m at VGS = 10 V, ID = 3.3 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process Max rDS(on) = 153 m at VGS = 4.5 V, ID = 2.7 Athat has been special tailored to minimize the on-state HBM E

 6.1. Size:313K  fairchild semi
 fdmc86102l.pdf pdf_icon

FDMC86106LZ

December 2010FDMC86102LN-Channel Power Trench MOSFET 100 V, 18 A, 23 mFeatures General Description Max rDS(on) = 23 m at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 34 m at VGS = 4.5 V, ID = 5.5 Abeen especially tailored to minimize the on-state resistance and Low Prof

 6.2. Size:260K  fairchild semi
 fdmc86102lz.pdf pdf_icon

FDMC86106LZ

April 2011FDMC86102LZN-Channel Power Trench MOSFET 100 V, 22 A, 24 mFeatures General Description Max rDS(on) = 24 m at VGS = 10 V, ID = 6.5 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process Max rDS(on) = 35 m at VGS = 4.5 V, ID = 5.5 Athat has been special tailored to minimize the on-state HBM ESD prot

 6.3. Size:344K  fairchild semi
 fdmc86102.pdf pdf_icon

FDMC86106LZ

July 2009FDMC86102N-Channel Power Trench MOSFET 100 V, 20 A, 24 mFeatures General Description Max rDS(on) = 24 m at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 38 m at VGS = 6 V, ID = 5 Abeen especially tailored to minimize the on-state resistance and Low Profile -

MOSTRAR MÁS

Otros transistores... FDMC8462 , FDMC8554 , FDMC86102 , STP652F , FDMC86102L , STP60L60F , FDMC86102LZ , STP60L60A , AON6414A , STP60L60 , FDMC8622 , STP45L01F , FDMC86240 , FDMC86244 , FDMC86324 , FDMC8651 , STP454 .

History: WM06DN03DE

 

 
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