FDMC86106LZ Todos los transistores

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FDMC86106LZ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDMC86106LZ

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 19 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 20 V

Tensión umbral compuerta-fuente Vgs(th): 2.2 V

Corriente continua de drenaje (Id): 7.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.103 Ohm

Empaquetado / Estuche: POWER33

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FDMC86106LZ Datasheet (PDF)

1.1. fdmc86106lz.pdf Size:318K _fairchild_semi

FDMC86106LZ
FDMC86106LZ

December 2010 FDMC86106LZ N-Channel Power Trench MOSFET 100 V, 7.5 A, 103 m? Features General Description Max rDS(on) = 103 m? at VGS = 10 V, ID = 3.3 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process Max rDS(on) = 153 m? at VGS = 4.5 V, ID = 2.7 A that has been special tailored to minimize the on-state HBM ESD protect

2.1. fdmc86102.pdf Size:344K _fairchild_semi

FDMC86106LZ
FDMC86106LZ

July 2009 FDMC86102 N-Channel Power Trench MOSFET 100 V, 20 A, 24 m? Features General Description Max rDS(on) = 24 m? at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 38 m? at VGS = 6 V, ID = 5 A been especially tailored to minimize the on-state resistance and Low Profile - 1 mm max in P

2.2. fdmc86102lz.pdf Size:260K _fairchild_semi

FDMC86106LZ
FDMC86106LZ

April 2011 FDMC86102LZ N-Channel Power Trench MOSFET 100 V, 22 A, 24 m? Features General Description Max rDS(on) = 24 m? at VGS = 10 V, ID = 6.5 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process Max rDS(on) = 35 m? at VGS = 4.5 V, ID = 5.5 A that has been special tailored to minimize the on-state HBM ESD protection lev

2.3. fdmc86102l.pdf Size:313K _fairchild_semi

FDMC86106LZ
FDMC86106LZ

December 2010 FDMC86102L N-Channel Power Trench MOSFET 100 V, 18 A, 23 m? Features General Description Max rDS(on) = 23 m? at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 34 m? at VGS = 4.5 V, ID = 5.5 A been especially tailored to minimize the on-state resistance and Low Profile - 1 mm

Otros transistores... FDMC8462 , FDMC8554 , FDMC86102 , STP652F , FDMC86102L , STP60L60F , FDMC86102LZ , STP60L60A , IRFP250 , STP60L60 , FDMC8622 , STP45L01F , FDMC86240 , FDMC86244 , FDMC86324 , FDMC8651 , STP454 .

 


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Introduzca al menos 1 números o letras