FDMC86106LZ Todos los transistores

 

FDMC86106LZ MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDMC86106LZ

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 19 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 7.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.103 Ohm

Encapsulados: POWER33

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FDMC86106LZ datasheet

 ..1. Size:318K  fairchild semi
fdmc86106lz.pdf pdf_icon

FDMC86106LZ

December 2010 FDMC86106LZ N-Channel Power Trench MOSFET 100 V, 7.5 A, 103 m Features General Description Max rDS(on) = 103 m at VGS = 10 V, ID = 3.3 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor s advanced Power Trench process Max rDS(on) = 153 m at VGS = 4.5 V, ID = 2.7 A that has been special tailored to minimize the on-state HBM E

 6.1. Size:313K  fairchild semi
fdmc86102l.pdf pdf_icon

FDMC86106LZ

December 2010 FDMC86102L N-Channel Power Trench MOSFET 100 V, 18 A, 23 m Features General Description Max rDS(on) = 23 m at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 34 m at VGS = 4.5 V, ID = 5.5 A been especially tailored to minimize the on-state resistance and Low Prof

 6.2. Size:260K  fairchild semi
fdmc86102lz.pdf pdf_icon

FDMC86106LZ

April 2011 FDMC86102LZ N-Channel Power Trench MOSFET 100 V, 22 A, 24 m Features General Description Max rDS(on) = 24 m at VGS = 10 V, ID = 6.5 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor s advanced Power Trench process Max rDS(on) = 35 m at VGS = 4.5 V, ID = 5.5 A that has been special tailored to minimize the on-state HBM ESD prot

 6.3. Size:344K  fairchild semi
fdmc86102.pdf pdf_icon

FDMC86106LZ

July 2009 FDMC86102 N-Channel Power Trench MOSFET 100 V, 20 A, 24 m Features General Description Max rDS(on) = 24 m at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 38 m at VGS = 6 V, ID = 5 A been especially tailored to minimize the on-state resistance and Low Profile -

Otros transistores... FDMC8462 , FDMC8554 , FDMC86102 , STP652F , FDMC86102L , STP60L60F , FDMC86102LZ , STP60L60A , IRFB4227 , STP60L60 , FDMC8622 , STP45L01F , FDMC86240 , FDMC86244 , FDMC86324 , FDMC8651 , STP454 .

History: TPCL4203 | GP1M003A080XG | WM03P41M2 | TK35A65W5 | IRLHS6242PBF | WM03N58M2 | SGT080N055

 

 

 

 

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