All MOSFET. FDMC86106LZ Datasheet

 

FDMC86106LZ MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDMC86106LZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 19 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 7.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.103 Ohm
   Package: POWER33

 FDMC86106LZ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDMC86106LZ Datasheet (PDF)

 ..1. Size:318K  fairchild semi
 fdmc86106lz.pdf

FDMC86106LZ FDMC86106LZ

December 2010FDMC86106LZN-Channel Power Trench MOSFET 100 V, 7.5 A, 103 mFeatures General Description Max rDS(on) = 103 m at VGS = 10 V, ID = 3.3 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process Max rDS(on) = 153 m at VGS = 4.5 V, ID = 2.7 Athat has been special tailored to minimize the on-state HBM E

 6.1. Size:313K  fairchild semi
 fdmc86102l.pdf

FDMC86106LZ FDMC86106LZ

December 2010FDMC86102LN-Channel Power Trench MOSFET 100 V, 18 A, 23 mFeatures General Description Max rDS(on) = 23 m at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 34 m at VGS = 4.5 V, ID = 5.5 Abeen especially tailored to minimize the on-state resistance and Low Prof

 6.2. Size:260K  fairchild semi
 fdmc86102lz.pdf

FDMC86106LZ FDMC86106LZ

April 2011FDMC86102LZN-Channel Power Trench MOSFET 100 V, 22 A, 24 mFeatures General Description Max rDS(on) = 24 m at VGS = 10 V, ID = 6.5 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process Max rDS(on) = 35 m at VGS = 4.5 V, ID = 5.5 Athat has been special tailored to minimize the on-state HBM ESD prot

 6.3. Size:344K  fairchild semi
 fdmc86102.pdf

FDMC86106LZ FDMC86106LZ

July 2009FDMC86102N-Channel Power Trench MOSFET 100 V, 20 A, 24 mFeatures General Description Max rDS(on) = 24 m at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 38 m at VGS = 6 V, ID = 5 Abeen especially tailored to minimize the on-state resistance and Low Profile -

 6.4. Size:488K  onsemi
 fdmc86102l.pdf

FDMC86106LZ FDMC86106LZ

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 6.5. Size:464K  onsemi
 fdmc86102.pdf

FDMC86106LZ FDMC86106LZ

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: FDMC8462 , FDMC8554 , FDMC86102 , STP652F , FDMC86102L , STP60L60F , FDMC86102LZ , STP60L60A , IRFB4110 , STP60L60 , FDMC8622 , STP45L01F , FDMC86240 , FDMC86244 , FDMC86324 , FDMC8651 , STP454 .

History: BF1109WR

 

 
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