VS3622DP2 Todos los transistores

 ..1. Size:1142K  cn vgsemi
 vs3622dp2.pdf

VS3622DP2 30V/42A Dual Asymmetric N-Channel Advanced Power MOSFET Features V DS 30 V R DS(on),TYP@ VGS=10 V 7.5 m Dual N-Channel 5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 11 m Enhancement mode I D 42 A Low on-resistance RDS(on) @ VGS=4.5 V Fast Switching and High efficiency PDFN5x6 Dual Opt2 100% Avalanche Tested Pb-free lead plating; RoHS compl

 6.1. Size:1113K  cn vgsemi
 vs3622dp.pdf

VS3622DP 30V/40A Dual N-Channel Advanced Power MOSFET Features V DS 30 V R DS(on),TYP@ VGS=10 V 8.7 m Dual N-Channel 5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 12 m Enhancement mode I D 40 A Low on-resistance RDS(on) @ VGS=4.5 V Fast Switching 100% Avalanche Tested PDFN5x6 Dual Pb-free lead plating; RoHS compliant Part ID Package Type Markin

 6.2. Size:1108K  cn vgsemi
 vs3622dp3.pdf

VS3622DP3 30V/40A Dual N-Channel Advanced Power MOSFET Features V DS 30 V R DS(on),TYP@ VGS=10 V 8.7 m Dual N-Channel 5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 12 m Enhancement mode I D 40 A Low on-resistance RDS(on) @ VGS=4.5 V Fast Switching PDFN5x6 Dual 100% Avalanche Tested Pb-free lead plating; RoHS compliant Part ID Package Type Marking P

 7.1. Size:735K  cn vanguard
 vs3622de.pdf

VS3622DE 30V/35A Dual N-Channel Advanced Power MOSFET Features V DS 30 V R DS(on),TYP@ VGS=10 V 10 m Dual N-Channel 5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 14 m Enhancement mode I D 35 A Low on-resistance RDS(on) @ VGS=4.5 V Fast Switching PDFN3333 100% Avalanche Tested Pb-free lead plating; RoHS compliant Tape and reel

 7.2. Size:1034K  cn vgsemi
 vs3622de.pdf

VS3622DE 30V/35A Dual N-Channel Advanced Power MOSFET Features V DS 30 V R DS(on),TYP@ VGS=10 V 10 m Dual N-Channel, 5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 14 m Enhancement mode I D 35 A Low on-resistance RDS(on) @ VGS=4.5 V Fast Switching PDFN3333 100% Avalanche Tested Pb-free lead plating; RoHS compliant Part ID Package Type Marking Pac

 7.3. Size:1357K  cn vgsemi
 vs3622db.pdf

VS3622DB 30V Dual Asymmetric N-Channel Advanced Power MOSFET V DS 30 30 V Features R DS(on),TYP@ VGS=10 V 8.2 6 m Dual Asymmetric N-Channel R DS(on),TYP@ VGS=4.5V 11 8.4 m High Current Capability I D 28 30 A Low on-resistance RDS(on) @ VGS=4.5 V Low Gate Charge DFN3x3 Pb-free lead plating; RoHS compliant Part ID Package Type Marking Packing VS3622DB DFN3x

 7.4. Size:1056K  cn vgsemi
 vs3622ds.pdf

VS3622DS 30V/12A Dual N-Channel Advanced Power MOSFET Features V DS 30 V R DS(on),TYP@ VGS=10 V 10 m Dual N-Channel 5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 14 m Enhancement mode I D 12 A Low on-resistance RDS(on) @ VGS=4.5 V High Effective SOP8 Pb-free lead plating; RoHS compliant Part ID Package Type Marking Packing VS3622DS SOP8 3622DS 300