Справочник MOSFET. VS3622DP2

 

VS3622DP2 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: VS3622DP2
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 21 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 42 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 5 ns
   Cossⓘ - Выходная емкость: 140 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.011 Ohm
   Тип корпуса: PDFN5X6

 Аналог (замена) для VS3622DP2

 

 

VS3622DP2 Datasheet (PDF)

 ..1. Size:1142K  cn vgsemi
 vs3622dp2.pdf

VS3622DP2 VS3622DP2

VS3622DP230V/42A Dual Asymmetric N-Channel Advanced Power MOSFETFeaturesV DS 30 VR DS(on),TYP@ VGS=10 V 7.5 m Dual N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 11 m Enhancement modeI D 42 A Low on-resistance RDS(on) @ VGS=4.5 V Fast Switching and High efficiencyPDFN5x6 Dual Opt2 100% Avalanche Tested Pb-free lead plating; RoHS compl

 6.1. Size:1113K  cn vgsemi
 vs3622dp.pdf

VS3622DP2 VS3622DP2

VS3622DP30V/40A Dual N-Channel Advanced Power MOSFETFeaturesV DS 30 VR DS(on),TYP@ VGS=10 V 8.7 m Dual N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 12 m Enhancement modeI D 40 A Low on-resistance RDS(on) @ VGS=4.5 V Fast Switching 100% Avalanche Tested PDFN5x6 Dual Pb-free lead plating; RoHS compliantPart ID Package Type Markin

 6.2. Size:1108K  cn vgsemi
 vs3622dp3.pdf

VS3622DP2 VS3622DP2

VS3622DP330V/40A Dual N-Channel Advanced Power MOSFETFeaturesV DS 30 VR DS(on),TYP@ VGS=10 V 8.7 m Dual N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 12 m Enhancement modeI D 40 A Low on-resistance RDS(on) @ VGS=4.5 V Fast SwitchingPDFN5x6 Dual 100% Avalanche Tested Pb-free lead plating; RoHS compliantPart ID Package Type Marking P

 7.1. Size:735K  cn vanguard
 vs3622de.pdf

VS3622DP2 VS3622DP2

VS3622DE 30V/35A Dual N-Channel Advanced Power MOSFET Features V DS 30 V R DS(on),TYP@ VGS=10 V 10 m Dual N-Channel5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 14 m Enhancement mode I D 35 A Low on-resistance RDS(on) @ VGS=4.5 V Fast Switching PDFN3333 100% Avalanche Tested Pb-free lead plating; RoHS compliant Tape and reel

 7.2. Size:1034K  cn vgsemi
 vs3622de.pdf

VS3622DP2 VS3622DP2

VS3622DE30V/35A Dual N-Channel Advanced Power MOSFETFeaturesV DS 30 VR DS(on),TYP@ VGS=10 V 10 m Dual N-Channel, 5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 14 m Enhancement modeI D 35 A Low on-resistance RDS(on) @ VGS=4.5 V Fast SwitchingPDFN3333 100% Avalanche Tested Pb-free lead plating; RoHS compliantPart ID Package Type Marking Pac

 7.3. Size:1357K  cn vgsemi
 vs3622db.pdf

VS3622DP2 VS3622DP2

VS3622DB30V Dual Asymmetric N-Channel Advanced Power MOSFETV DS 30 30 VFeaturesR DS(on),TYP@ VGS=10 V 8.2 6 m Dual Asymmetric N-ChannelR DS(on),TYP@ VGS=4.5V 11 8.4 m High Current CapabilityI D 28 30 A Low on-resistance RDS(on) @ VGS=4.5 V Low Gate ChargeDFN3x3 Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS3622DB DFN3x

 7.4. Size:1056K  cn vgsemi
 vs3622ds.pdf

VS3622DP2 VS3622DP2

VS3622DS30V/12A Dual N-Channel Advanced Power MOSFETFeaturesV DS 30 VR DS(on),TYP@ VGS=10 V 10 m Dual N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 14 m Enhancement modeI D 12 A Low on-resistance RDS(on) @ VGS=4.5 V High EffectiveSOP8 Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS3622DS SOP8 3622DS 300

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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