VS3640DP3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: VS3640DP3
   Código: 3640DP3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 18 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.4 V
   Qgⓘ - Carga de la puerta: 11.3 nC
   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 75 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.019 Ohm
   Paquete / Cubierta: PDFN5X6

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VS3640DP3 Datasheet (PDF)

..1. Size:1110K cn vgsemi
vs3640dp3.pdf

VS3640DP330V/30A Dual N-Channel Advanced Power MOSFETFeaturesV DS 30 VR DS(on),TYP@ VGS=10 V 14 m Dual N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 22 m Enhancement modeI D 30 A Low on-resistance RDS(on) @ VGS=4.5 V Fast SwitchingPDFN5x6 Dual 100% Avalanche Tested Pb-free lead plating; RoHS compliantPart ID Package Type Marki

6.1. Size:1182K cn vgsemi
vs3640dp.pdf

VS3640DP30V/30A Dual N-Channel Advanced Power MOSFETFeaturesV DS 30 VR DS(on),TYP@ VGS=10 V 14 m Dual N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 22 m Enhancement modeI D 30 A Low on-resistance RDS(on) @ VGS=4.5 V Fast SwitchingPDFN5x6 Dual 100% Avalanche Tested Pb-free lead plating; RoHS compliantPart ID Package Type Markin

7.1. Size:493K cn vanguard
vs3640ds.pdf

VS3640DS 30V/9A Dual N-Channel Advanced Power MOSFET Features V DS 30 V R DS(on),TYP@ VGS=10 V 16 m Dual N-Channel5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 24 m Enhancement mode I D 9 A Fast Switching High Effective SOP8 Pb-free lead plating; RoHS compliant; Halogen-Free Tape and reel Part ID Package Type Marking information VS

7.2. Size:1011K cn vgsemi
vs3640db.pdf

VS3640DB30V Dual Asymmetric N-Channel Advanced Power MOSFETFeaturesV DS 30 VR DS(on),TYP@ VGS=10 V 14 m Dual N-ChannelR DS(on),TYP@ VGS=4.5 V 22 m High Current CapabilityI D 25 A Low on-resistance RDS(on) @ VGS=4.5 V Low Gate ChargeDFN3x3 Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS3640DB DFN3x3 3640DB 5000pcs/Reel

7.3. Size:1034K cn vgsemi
vs3640de.pdf

VS3640DE30V/24A Dual N-Channel Advanced Power MOSFETFeaturesV DS 30 VR DS(on),TYP@ VGS=10 V 15 m Dual N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 24 m Enhancement modeI D 24 A Low on-resistance RDS(on) @ VGS=4.5 V Fast SwitchingPDFN3333 100% Avalanche Tested Pb-free lead plating; RoHS compliantPart ID Package Type Marking Pa

7.4. Size:1050K cn vgsemi
vs3640ds.pdf

VS3640DS30V/9A Dual N-Channel Advanced Power MOSFETFeaturesV DS 30 VR DS(on),TYP@ VGS=10 V 16 m Dual N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 24 m Enhancement modeI D 9 A Fast Switching High EffectiveSOP8 Pb-free lead plating; RoHS compliant; Halogen-FreePart ID Package Type Marking PackingVS3640DS SOP8 3640DS 3000pcs/reelMaxim

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