SD2933W MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SD2933W
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 648 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 125 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 40 V
|Id|ⓘ - Corriente continua de drenaje: 40 A
Tjⓘ - Temperatura máxima de unión: 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 372 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm
Paquete / Cubierta: M177
Búsqueda de reemplazo de MOSFET SD2933W
SD2933W Datasheet (PDF)
sd2933.pdf
SD2933HF/VHF/UHF RF power N-channel MOSFETsDatasheet - production dataFeatures Gold metalization Excellent thermal stability Common source configuration POUT = 300 W min. with 20 dB gain @ 30 MHz Thermally enhanced packaging for lower junction temperaturesM177 Epoxy sealedDescriptionThe SD2933 is a gold metalized N-channel MOS field-effect RF power trans
sd2931.pdf
SD2931RF POWER TRANSISTORSHF/VHF/UHF N-CHANNEL MOSFETs GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 150 W MIN. WITH 14 dB GAIN @ 175 MHz M174epoxy sealedDESCRIPTIONThe SD2931 is a gold metallized N-Channel MOSPIN CONNECTIONfield-effect RF power transistor. It is intended foruse in 50 V dc large signal applications up t
sd2931-10.pdf
SD2931-10RF power transistorsHF/VHF/UHF N-channel MOSFETsFeatures Gold metallization Excellent thermal stability Common source configuration POUT = 150 W min. with 14 dB gain @ 175 MHz Thermally enhanced packaging for lower junction temperaturesDescriptionM174Epoxy sealedThe SD2931-10 is a gold metallized N-channel MOS field-effect RF power transisto
sd2932.pdf
SD2932 HF/VHF/UHF RF power N-channel MOSFET Datasheet - production data Features Gold metallization Excellent thermal stability Common source push-pull configuration P = 300 W min. with 15 dB gain @ 175 OUTMHz Description The SD2932 is a gold metallized N-channel MOS Figure 1: Pin connection field-effect RF power transistor used for 50 V DC large sign
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
Recientemente añadidas las descripciónes de los transistores:
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