SD2933W Todos los transistores

 

SD2933W MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SD2933W
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 648 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 125 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 40 V
   |Id|ⓘ - Corriente continua de drenaje: 40 A
   Tjⓘ - Temperatura máxima de unión: 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 372 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm
   Paquete / Cubierta: M177

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SD2933W Datasheet (PDF)

 8.1. Size:514K  st
sd2933.pdf

SD2933W
SD2933W

SD2933HF/VHF/UHF RF power N-channel MOSFETsDatasheet - production dataFeatures Gold metalization Excellent thermal stability Common source configuration POUT = 300 W min. with 20 dB gain @ 30 MHz Thermally enhanced packaging for lower junction temperaturesM177 Epoxy sealedDescriptionThe SD2933 is a gold metalized N-channel MOS field-effect RF power trans

 8.2. Size:85K  njs
sd2933.pdf

SD2933W
SD2933W

 9.1. Size:197K  st
sd2931.pdf

SD2933W
SD2933W

SD2931RF POWER TRANSISTORSHF/VHF/UHF N-CHANNEL MOSFETs GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 150 W MIN. WITH 14 dB GAIN @ 175 MHz M174epoxy sealedDESCRIPTIONThe SD2931 is a gold metallized N-Channel MOSPIN CONNECTIONfield-effect RF power transistor. It is intended foruse in 50 V dc large signal applications up t

 9.2. Size:346K  st
sd2931-10.pdf

SD2933W
SD2933W

SD2931-10RF power transistorsHF/VHF/UHF N-channel MOSFETsFeatures Gold metallization Excellent thermal stability Common source configuration POUT = 150 W min. with 14 dB gain @ 175 MHz Thermally enhanced packaging for lower junction temperaturesDescriptionM174Epoxy sealedThe SD2931-10 is a gold metallized N-channel MOS field-effect RF power transisto

 9.3. Size:1415K  st
sd2932.pdf

SD2933W
SD2933W

SD2932 HF/VHF/UHF RF power N-channel MOSFET Datasheet - production data Features Gold metallization Excellent thermal stability Common source push-pull configuration P = 300 W min. with 15 dB gain @ 175 OUTMHz Description The SD2932 is a gold metallized N-channel MOS Figure 1: Pin connection field-effect RF power transistor used for 50 V DC large sign

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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