SD2933W Datasheet. Specs and Replacement

Type Designator: SD2933W  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 648 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 125 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 40 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 200 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 372 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: M177

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SD2933W datasheet

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SD2933W

SD2933 HF/VHF/UHF RF power N-channel MOSFETs Datasheet - production data Features Gold metalization Excellent thermal stability Common source configuration POUT = 300 W min. with 20 dB gain @ 30 MHz Thermally enhanced packaging for lower junction temperatures M177 Epoxy sealed Description The SD2933 is a gold metalized N-channel MOS field-effect RF power trans... See More ⇒

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SD2933W

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SD2933W

SD2931 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 150 W MIN. WITH 14 dB GAIN @ 175 MHz M174 epoxy sealed DESCRIPTION The SD2931 is a gold metallized N-Channel MOS PIN CONNECTION field-effect RF power transistor. It is intended for use in 50 V dc large signal applications up t... See More ⇒

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SD2933W

SD2931-10 RF power transistors HF/VHF/UHF N-channel MOSFETs Features Gold metallization Excellent thermal stability Common source configuration POUT = 150 W min. with 14 dB gain @ 175 MHz Thermally enhanced packaging for lower junction temperatures Description M174 Epoxy sealed The SD2931-10 is a gold metallized N-channel MOS field-effect RF power transisto... See More ⇒

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Detailed specifications: VS3640DP, VS3640DP3, VS3645DE-G, VS4620DE-G, VS4620DP-G, VS4620DS-G, VS4640DE, VSA007N02KD, FTP08N06A, FDD6030BL, FDD603AL, FDD6644, FDU6644, FDD6670S, FDD6676, FDD6676S, FDD6680S

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