MDP06N090TH MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MDP06N090TH datasheet

..1. Size:943K magnachip
mdp06n090th.pdf pdf_icon

MDP06N090 Single N-channel Trench MOSFET 60V, 62A, 9.0m General Description Features The MDP06N090 uses advanced MagnaChip s MOSFET V = 60V DS Technology, which provides high performance in on-state I = 62A @V = 10V D GS resistance, fast switching performance and excellent R DS(ON) quality. MDP06N090 is suitable device for Synchronous

..2. Size:289K inchange semiconductor
mdp06n090th.pdf pdf_icon

isc N-Channel MOSFET Transistor MDP06N090TH FEATURES Drain Current I = 62A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 9m (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

7.1. Size:992K magnachip
mdp06n033th.pdf pdf_icon

MDP06N033 Single N-channel Trench MOSFET 60V, 120A, 3.3m General Description Features The MDP06N033 uses advanced MagnaChip s MOSFET V = 60V DS Technology, which provides high performance in on-state I = 120A @V = 10V D GS resistance, fast switching performance and excellent R DS(ON) quality. MDP06N033 is suitable device for Synchronous

7.2. Size:289K inchange semiconductor
mdp06n033th.pdf pdf_icon

isc N-Channel MOSFET Transistor MDP06N033TH FEATURES Drain Current I = 159.8A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 3.3m (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and s

Otros transistores... FDH20N40 , FDP20N40 , FDH34N40 , FMV60N280S2HF , IRF3305B , ISW65R041CFD , MDI5N40RH , MDP06N033TH , 20N60 , MDP10N055TH , MDP12N50TH , MDP13N50TH , MDP18N50TH , MDP5N50TH , MDP7N50 , MDP9N50TH , MMD60R360QRH .