MDP06N090TH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MDP06N090TH
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 70 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 62 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 18.4 nS
   Cossⓘ - Capacitancia de salida: 457.2 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
   Paquete / Cubierta: TO220

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MDP06N090TH Datasheet (PDF)

..1. Size:943K magnachip
mdp06n090th.pdf

MDP06N090 Single N-channel Trench MOSFET 60V, 62A, 9.0m General Description Features The MDP06N090 uses advanced MagnaChips MOSFET V = 60V DSTechnology, which provides high performance in on-state I = 62A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDP06N090 is suitable device for Synchronous

..2. Size:289K inchange semiconductor
mdp06n090th.pdf

isc N-Channel MOSFET Transistor MDP06N090THFEATURESDrain Current : I = 62A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 9m(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

7.1. Size:992K magnachip
mdp06n033th.pdf

MDP06N033 Single N-channel Trench MOSFET 60V, 120A, 3.3m General Description Features The MDP06N033 uses advanced MagnaChips MOSFET V = 60V DSTechnology, which provides high performance in on-state I = 120A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDP06N033 is suitable device for Synchronous

7.2. Size:289K inchange semiconductor
mdp06n033th.pdf

isc N-Channel MOSFET Transistor MDP06N033THFEATURESDrain Current : I = 159.8A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 3.3m(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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