MDP06N090TH Datasheet and Replacement. Cross Reference Search

MDP06N090TH Datasheet (PDF)

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MDP06N090 Single N-channel Trench MOSFET 60V, 62A, 9.0m General Description Features The MDP06N090 uses advanced MagnaChips MOSFET V = 60V DSTechnology, which provides high performance in on-state I = 62A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDP06N090 is suitable device for Synchronous

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isc N-Channel MOSFET Transistor MDP06N090THFEATURESDrain Current : I = 62A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 9m(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

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MDP06N033 Single N-channel Trench MOSFET 60V, 120A, 3.3m General Description Features The MDP06N033 uses advanced MagnaChips MOSFET V = 60V DSTechnology, which provides high performance in on-state I = 120A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDP06N033 is suitable device for Synchronous

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isc N-Channel MOSFET Transistor MDP06N033THFEATURESDrain Current : I = 159.8A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 3.3m(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s

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