All MOSFET. MDP06N090TH Datasheet

 

MDP06N090TH MOSFET. Datasheet pdf. Equivalent


   Type Designator: MDP06N090TH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.2 V
   |Id|ⓘ - Maximum Drain Current: 62 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 32.2 nC
   trⓘ - Rise Time: 18.4 nS
   Cossⓘ - Output Capacitance: 457.2 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO220

 MDP06N090TH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MDP06N090TH Datasheet (PDF)

 ..1. Size:943K  magnachip
 mdp06n090th.pdf

MDP06N090TH MDP06N090TH

MDP06N090 Single N-channel Trench MOSFET 60V, 62A, 9.0m General Description Features The MDP06N090 uses advanced MagnaChips MOSFET V = 60V DSTechnology, which provides high performance in on-state I = 62A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDP06N090 is suitable device for Synchronous

 ..2. Size:289K  inchange semiconductor
 mdp06n090th.pdf

MDP06N090TH MDP06N090TH

isc N-Channel MOSFET Transistor MDP06N090THFEATURESDrain Current : I = 62A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 9m(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

 7.1. Size:992K  magnachip
 mdp06n033th.pdf

MDP06N090TH MDP06N090TH

MDP06N033 Single N-channel Trench MOSFET 60V, 120A, 3.3m General Description Features The MDP06N033 uses advanced MagnaChips MOSFET V = 60V DSTechnology, which provides high performance in on-state I = 120A @V = 10V D GSresistance, fast switching performance and excellent R DS(ON)quality. MDP06N033 is suitable device for Synchronous

 7.2. Size:289K  inchange semiconductor
 mdp06n033th.pdf

MDP06N090TH MDP06N090TH

isc N-Channel MOSFET Transistor MDP06N033THFEATURESDrain Current : I = 159.8A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 3.3m(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: 2N7271H3

 

 
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