MDP06N090TH MOSFET Datasheet: N-Ch, 60V, 62A. Full specification with pinout and replacement list

MDP06N090TH Specs and Replacement

Type Designator: MDP06N090TH

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 70 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 62 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18.4 nS

Cossⓘ - Output Capacitance: 457.2 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: TO220

MDP06N090TH substitution

- MOSFET ⓘ Cross-Reference Search

MDP06N090TH datasheet

..1. Size:943K magnachip
mdp06n090th.pdf pdf_icon

MDP06N090 Single N-channel Trench MOSFET 60V, 62A, 9.0m General Description Features The MDP06N090 uses advanced MagnaChip s MOSFET V = 60V DS Technology, which provides high performance in on-state I = 62A @V = 10V D GS resistance, fast switching performance and excellent R DS(ON) quality. MDP06N090 is suitable device for Synchronous ... See More ⇒

..2. Size:289K inchange semiconductor
mdp06n090th.pdf pdf_icon

isc N-Channel MOSFET Transistor MDP06N090TH FEATURES Drain Current I = 62A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 9m (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒

7.1. Size:992K magnachip
mdp06n033th.pdf pdf_icon

MDP06N033 Single N-channel Trench MOSFET 60V, 120A, 3.3m General Description Features The MDP06N033 uses advanced MagnaChip s MOSFET V = 60V DS Technology, which provides high performance in on-state I = 120A @V = 10V D GS resistance, fast switching performance and excellent R DS(ON) quality. MDP06N033 is suitable device for Synchronous ... See More ⇒

7.2. Size:289K inchange semiconductor
mdp06n033th.pdf pdf_icon

isc N-Channel MOSFET Transistor MDP06N033TH FEATURES Drain Current I = 159.8A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 3.3m (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and s... See More ⇒

Detailed specifications: FDH20N40, FDP20N40, FDH34N40, FMV60N280S2HF, IRF3305B, ISW65R041CFD, MDI5N40RH, MDP06N033TH, 20N60, MDP10N055TH, MDP12N50TH, MDP13N50TH, MDP18N50TH, MDP5N50TH, MDP7N50, MDP9N50TH, MMD60R360QRH