MDP18N50TH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MDP18N50TH
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 236 W
Voltaje máximo drenador - fuente |Vds|: 500 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 18 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 5 V
Carga de la puerta (Qg): 48 nC
Tiempo de subida (tr): 74 nS
Conductancia de drenaje-sustrato (Cd): 302 pF
Resistencia entre drenaje y fuente RDS(on): 0.27 Ohm
Paquete / Cubierta: TO220
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MDP18N50TH Datasheet (PDF)
mdp18n50th.pdf
MDP18N50 N-Channel MOSFET 500V, 18.0 A, 0.27 Features General Description V = 500V DS The MDP18N50 uses advanced Magnachips I = 18.0A @V = 10V D GS MOSFET Technology, which provides low on- R
mdp18n50th.pdf
isc N-Channel MOSFET Transistor MDP18N50THFEATURESDrain Current : I = 18A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.27(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
mdf18n50bth mdp18n50bth.pdf
MDP18N50B / MDF18N50B N-Channel MOSFET 500V, 18.0 A, 0.27General Description Features The MDP/F18N50B uses advanced Magnachips VDS = 500V MOSFET Technology, which provides low on-state ID = 18.0A @VGS = 10V resistance, high switching performance and RDS(ON) 0.27 @VGS = 10V excellent quality. MDP/F18N50B is suitable device for SMPS, HID Applications and general
mdp18n50bth.pdf
isc N-Channel MOSFET Transistor MDP18N50BTHFEATURESDrain Current : I = 18A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.27(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol
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