MDP18N50TH MOSFET. Datasheet pdf. Equivalent
Type Designator: MDP18N50TH
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 236 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 18 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 48 nC
trⓘ - Rise Time: 74 nS
Cossⓘ - Output Capacitance: 302 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm
Package: TO220
MDP18N50TH Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MDP18N50TH Datasheet (PDF)
mdp18n50th.pdf
MDP18N50 N-Channel MOSFET 500V, 18.0 A, 0.27 Features General Description V = 500V DS The MDP18N50 uses advanced Magnachips I = 18.0A @V = 10V D GS MOSFET Technology, which provides low on- R
mdp18n50th.pdf
isc N-Channel MOSFET Transistor MDP18N50THFEATURESDrain Current : I = 18A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.27(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
mdf18n50bth mdp18n50bth.pdf
MDP18N50B / MDF18N50B N-Channel MOSFET 500V, 18.0 A, 0.27General Description Features The MDP/F18N50B uses advanced Magnachips VDS = 500V MOSFET Technology, which provides low on-state ID = 18.0A @VGS = 10V resistance, high switching performance and RDS(ON) 0.27 @VGS = 10V excellent quality. MDP/F18N50B is suitable device for SMPS, HID Applications and general
mdp18n50bth.pdf
isc N-Channel MOSFET Transistor MDP18N50BTHFEATURESDrain Current : I = 18A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.27(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol
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