FDMC86240 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDMC86240
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 16 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.051 Ohm
Paquete / Cubierta: POWER33

Búsqueda de reemplazo de MOSFET FDMC86240

FDMC86240 Datasheet (PDF)

..1. Size:315K fairchild semi
fdmc86240.pdf

July 2010FDMC86240N-Channel Power Trench MOSFET 150 V, 16 A, 51 mFeatures General Description Max rDS(on) = 51 m at VGS = 10 V, ID = 4.6 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 70 m at VGS = 6 V, ID = 3.9 Abeen especially tailored to minimize the on-state resistance and Low Profile -

6.1. Size:374K 1
fdmc86244.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

6.2. Size:256K fairchild semi
fdmc86248.pdf

September 2012FDMC86248N-Channel Power Trench MOSFET 150 V, 13 A, 90 mFeatures General Description Max rDS(on) = 90 m at VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 125 m at VGS = 6 V, ID = 2.9 Abeen especially tailored to minimize the on-state resistance and Advance

6.3. Size:328K fairchild semi
fdmc86244.pdf

October 2010FDMC86244N-Channel Power Trench MOSFET 150 V, 9.4 A, 134 mFeatures General Description Max rDS(on) = 134 m at VGS = 10 V, ID = 2.8 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 186 m at VGS = 6 V, ID = 2.4 Abeen especially tailored to minimize the on-state resistance and Low Pr

6.4. Size:374K onsemi
fdmc86244.pdf

Otros transistores... FDMC86102L , STP60L60F , FDMC86102LZ , STP60L60A , FDMC86106LZ , STP60L60 , FDMC8622 , STP45L01F , IRF630 , FDMC86244 , FDMC86324 , FDMC8651 , STP454 , FDMC86520L , FDMC8878 , STP4410 , FDMC8882 .

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