FDMC86240 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

FDMC86240 datasheet

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July 2010 FDMC86240 N-Channel Power Trench MOSFET 150 V, 16 A, 51 m Features General Description Max rDS(on) = 51 m at VGS = 10 V, ID = 4.6 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 70 m at VGS = 6 V, ID = 3.9 A been especially tailored to minimize the on-state resistance and Low Profile -

6.1. Size:374K 1
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

6.2. Size:256K fairchild semi
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September 2012 FDMC86248 N-Channel Power Trench MOSFET 150 V, 13 A, 90 m Features General Description Max rDS(on) = 90 m at VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 125 m at VGS = 6 V, ID = 2.9 A been especially tailored to minimize the on-state resistance and Advance

6.3. Size:328K fairchild semi
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October 2010 FDMC86244 N-Channel Power Trench MOSFET 150 V, 9.4 A, 134 m Features General Description Max rDS(on) = 134 m at VGS = 10 V, ID = 2.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 186 m at VGS = 6 V, ID = 2.4 A been especially tailored to minimize the on-state resistance and Low Pr