Справочник MOSFET. FDMC86240

 

FDMC86240 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDMC86240
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 40 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 16 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.051 Ohm
   Тип корпуса: POWER33

 Аналог (замена) для FDMC86240

 

 

FDMC86240 Datasheet (PDF)

 ..1. Size:315K  fairchild semi
 fdmc86240.pdf

FDMC86240 FDMC86240

July 2010FDMC86240N-Channel Power Trench MOSFET 150 V, 16 A, 51 mFeatures General Description Max rDS(on) = 51 m at VGS = 10 V, ID = 4.6 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 70 m at VGS = 6 V, ID = 3.9 Abeen especially tailored to minimize the on-state resistance and Low Profile -

 6.1. Size:374K  1
 fdmc86244.pdf

FDMC86240 FDMC86240

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 6.2. Size:256K  fairchild semi
 fdmc86248.pdf

FDMC86240 FDMC86240

September 2012FDMC86248N-Channel Power Trench MOSFET 150 V, 13 A, 90 mFeatures General Description Max rDS(on) = 90 m at VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 125 m at VGS = 6 V, ID = 2.9 Abeen especially tailored to minimize the on-state resistance and Advance

 6.3. Size:328K  fairchild semi
 fdmc86244.pdf

FDMC86240 FDMC86240

October 2010FDMC86244N-Channel Power Trench MOSFET 150 V, 9.4 A, 134 mFeatures General Description Max rDS(on) = 134 m at VGS = 10 V, ID = 2.8 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 186 m at VGS = 6 V, ID = 2.4 Abeen especially tailored to minimize the on-state resistance and Low Pr

 6.4. Size:374K  onsemi
 fdmc86244.pdf

FDMC86240 FDMC86240

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Другие MOSFET... FDMC86102L , STP60L60F , FDMC86102LZ , STP60L60A , FDMC86106LZ , STP60L60 , FDMC8622 , STP45L01F , IRF630 , FDMC86244 , FDMC86324 , FDMC8651 , STP454 , FDMC86520L , FDMC8878 , STP4410 , FDMC8882 .

 

 
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