MMD60R580PBRH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MMD60R580PBRH
   Código: 60R580P.
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 70 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 18 nC
   trⓘ - Tiempo de subida: 34 nS
   Cossⓘ - Capacitancia de salida: 428 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.58 Ohm
   Paquete / Cubierta: TO252

Búsqueda de reemplazo de MOSFET MMD60R580PBRH

MMD60R580PBRH Datasheet (PDF)

..1. Size:1069K magnachip
mmd60r580pbrh.pdf

MMD60R580PB Datasheet MMD60R580PB 600V 0.58 N-channel MOSFET Description MMD60R580PB is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well

..2. Size:309K inchange semiconductor
mmd60r580pbrh.pdf

isc N-Channel MOSFET Transistor MMD60R580PBRHFEATURESDrain Current : I = 8A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.58(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so

4.1. Size:1141K magnachip
mmd60r580prh.pdf

MMD60R580P Datasheet MMD60R580P 600V 0.58 N-channel MOSFET Description MMD60R580P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as

4.2. Size:309K inchange semiconductor
mmd60r580prh.pdf

isc N-Channel MOSFET Transistor MMD60R580PRHFEATURESDrain Current : I = 8A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.58(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol

5.1. Size:1279K magnachip
mmd60r580qrh.pdf

MMD60R580Q Datasheet MMD60R580Q 600V 0.58 N-channel MOSFET Description MMD60R580Q is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as

5.2. Size:263K inchange semiconductor
mmd60r580q.pdf

Isc N-Channel MOSFET Transistor MMD60R580QFEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol

5.3. Size:310K inchange semiconductor
mmd60r580qrh.pdf

isc N-Channel MOSFET Transistor MMD60R580QRHFEATURESDrain Current : I = 8A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.58(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol

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