MMD60R580PBRH
MOSFET. Datasheet pdf. Equivalent
Type Designator: MMD60R580PBRH
Marking Code: 60R580P.
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 70
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 8
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 18
nC
trⓘ - Rise Time: 34
nS
Cossⓘ -
Output Capacitance: 428
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.58
Ohm
Package:
TO252
MMD60R580PBRH
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MMD60R580PBRH
Datasheet (PDF)
..1. Size:1069K magnachip
mmd60r580pbrh.pdf 
MMD60R580PB Datasheet MMD60R580PB 600V 0.58 N-channel MOSFET Description MMD60R580PB is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well
..2. Size:309K inchange semiconductor
mmd60r580pbrh.pdf
isc N-Channel MOSFET Transistor MMD60R580PBRHFEATURESDrain Current : I = 8A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.58(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so
4.1. Size:1141K magnachip
mmd60r580prh.pdf
MMD60R580P Datasheet MMD60R580P 600V 0.58 N-channel MOSFET Description MMD60R580P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as
4.2. Size:309K inchange semiconductor
mmd60r580prh.pdf
isc N-Channel MOSFET Transistor MMD60R580PRHFEATURESDrain Current : I = 8A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.58(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol
5.1. Size:1279K magnachip
mmd60r580qrh.pdf
MMD60R580Q Datasheet MMD60R580Q 600V 0.58 N-channel MOSFET Description MMD60R580Q is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as
5.2. Size:263K inchange semiconductor
mmd60r580q.pdf
Isc N-Channel MOSFET Transistor MMD60R580QFEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol
5.3. Size:310K inchange semiconductor
mmd60r580qrh.pdf
isc N-Channel MOSFET Transistor MMD60R580QRHFEATURESDrain Current : I = 8A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.58(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol
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