MMD80R900PCRH Todos los transistores

 

MMD80R900PCRH MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMD80R900PCRH

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 75.8 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 22.4 nS

Cossⓘ - Capacitancia de salida: 508 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.9 Ohm

Encapsulados: TO252

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MMD80R900PCRH datasheet

 ..1. Size:1323K  magnachip
mmd80r900pcrh.pdf pdf_icon

MMD80R900PCRH

MMD80R900PC Datasheet MMD80R900PC 800V 0.9 N-channel MOSFET Description MMD80R900PC is power MOSFET using Magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as

 ..2. Size:310K  inchange semiconductor
mmd80r900pcrh.pdf pdf_icon

MMD80R900PCRH

isc N-Channel MOSFET Transistor MMD80R900PCRH FEATURES Drain Current I = 6A@ T =25 D C Drain Source Voltage V = 800V(Min) DSS Static Drain-Source On-Resistance R = 0.9 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol

 4.1. Size:1279K  magnachip
mmd80r900prh.pdf pdf_icon

MMD80R900PCRH

MMD80R900P Datasheet MMD80R900P 800V 0.9 N-channel MOSFET Description MMD80R900P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as lo

 4.2. Size:208K  inchange semiconductor
mmd80r900p.pdf pdf_icon

MMD80R900PCRH

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor MMD80R900P FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications Motor contorl DC-DC conventers ABSOLUTE MAXIMUM RATINGS(

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History: STB7NK80Z | LPM8205B6F

 

 

 

 

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