Справочник MOSFET. MMD80R900PCRH

 

MMD80R900PCRH MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: MMD80R900PCRH
   Маркировка: 80R900P
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 75.8 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 6 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 17.6 nC
   trⓘ - Время нарастания: 22.4 ns
   Cossⓘ - Выходная емкость: 508 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.9 Ohm
   Тип корпуса: TO252

 Аналог (замена) для MMD80R900PCRH

 

 

MMD80R900PCRH Datasheet (PDF)

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 mmd80r900pcrh.pdf

MMD80R900PCRH MMD80R900PCRH

MMD80R900PC Datasheet MMD80R900PC 800V 0.9 N-channel MOSFET Description MMD80R900PC is power MOSFET using Magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as

 ..2. Size:310K  inchange semiconductor
 mmd80r900pcrh.pdf

MMD80R900PCRH MMD80R900PCRH

isc N-Channel MOSFET Transistor MMD80R900PCRHFEATURESDrain Current : I = 6A@ T =25D CDrain Source Voltage: V = 800V(Min)DSSStatic Drain-Source On-Resistance: R = 0.9(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol

 4.1. Size:1279K  magnachip
 mmd80r900prh.pdf

MMD80R900PCRH MMD80R900PCRH

MMD80R900P Datasheet MMD80R900P 800V 0.9 N-channel MOSFET Description MMD80R900P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as lo

 4.2. Size:208K  inchange semiconductor
 mmd80r900p.pdf

MMD80R900PCRH MMD80R900PCRH

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor MMD80R900PFEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsMotor contorlDC-DC conventersABSOLUTE MAXIMUM RATINGS(

 4.3. Size:310K  inchange semiconductor
 mmd80r900prh.pdf

MMD80R900PCRH MMD80R900PCRH

isc N-Channel MOSFET Transistor MMD80R900PRHFEATURESDrain Current : I = 6A@ T =25D CDrain Source Voltage: V = 800V(Min)DSSStatic Drain-Source On-Resistance: R = 0.9(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

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