MMD80R900QZRH Todos los transistores

 ..1. Size:1333K  magnachip
 mmd80r900qzrh.pdf

MMD80R900QZ Datasheet MMD80R900QZ 800V 0.90 N-channel MOSFET Description MMD80R900QZ is power MOSFET using Magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well

 5.1. Size:1279K  magnachip
 mmd80r900prh.pdf

MMD80R900P Datasheet MMD80R900P 800V 0.9 N-channel MOSFET Description MMD80R900P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as lo

 5.2. Size:1323K  magnachip
 mmd80r900pcrh.pdf

MMD80R900PC Datasheet MMD80R900PC 800V 0.9 N-channel MOSFET Description MMD80R900PC is power MOSFET using Magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as

 5.3. Size:208K  inchange semiconductor
 mmd80r900p.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor MMD80R900P FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications Motor contorl DC-DC conventers ABSOLUTE MAXIMUM RATINGS(

 5.4. Size:310K  inchange semiconductor
 mmd80r900prh.pdf

isc N-Channel MOSFET Transistor MMD80R900PRH FEATURES Drain Current I = 6A@ T =25 D C Drain Source Voltage V = 800V(Min) DSS Static Drain-Source On-Resistance R = 0.9 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole

 5.5. Size:310K  inchange semiconductor
 mmd80r900pcrh.pdf

isc N-Channel MOSFET Transistor MMD80R900PCRH FEATURES Drain Current I = 6A@ T =25 D C Drain Source Voltage V = 800V(Min) DSS Static Drain-Source On-Resistance R = 0.9 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol