All MOSFET. MMD80R900QZRH Datasheet

 

MMD80R900QZRH MOSFET. Datasheet pdf. Equivalent


   Type Designator: MMD80R900QZRH
   Marking Code: 80R900QZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 13 nC
   trⓘ - Rise Time: 29 nS
   Cossⓘ - Output Capacitance: 21 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
   Package: TO252

 MMD80R900QZRH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MMD80R900QZRH Datasheet (PDF)

 ..1. Size:1333K  magnachip
 mmd80r900qzrh.pdf

MMD80R900QZRH MMD80R900QZRH

MMD80R900QZ Datasheet MMD80R900QZ 800V 0.90 N-channel MOSFET Description MMD80R900QZ is power MOSFET using Magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well

 5.1. Size:1279K  magnachip
 mmd80r900prh.pdf

MMD80R900QZRH MMD80R900QZRH

MMD80R900P Datasheet MMD80R900P 800V 0.9 N-channel MOSFET Description MMD80R900P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as lo

 5.2. Size:1323K  magnachip
 mmd80r900pcrh.pdf

MMD80R900QZRH MMD80R900QZRH

MMD80R900PC Datasheet MMD80R900PC 800V 0.9 N-channel MOSFET Description MMD80R900PC is power MOSFET using Magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as

 5.3. Size:208K  inchange semiconductor
 mmd80r900p.pdf

MMD80R900QZRH MMD80R900QZRH

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor MMD80R900PFEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsMotor contorlDC-DC conventersABSOLUTE MAXIMUM RATINGS(

 5.4. Size:310K  inchange semiconductor
 mmd80r900prh.pdf

MMD80R900QZRH MMD80R900QZRH

isc N-Channel MOSFET Transistor MMD80R900PRHFEATURESDrain Current : I = 6A@ T =25D CDrain Source Voltage: V = 800V(Min)DSSStatic Drain-Source On-Resistance: R = 0.9(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

 5.5. Size:310K  inchange semiconductor
 mmd80r900pcrh.pdf

MMD80R900QZRH MMD80R900QZRH

isc N-Channel MOSFET Transistor MMD80R900PCRHFEATURESDrain Current : I = 6A@ T =25D CDrain Source Voltage: V = 800V(Min)DSSStatic Drain-Source On-Resistance: R = 0.9(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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