MMFT60R195PCTH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MMFT60R195PCTH
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 34 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 50 nS
   Cossⓘ - Capacitancia de salida: 999 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.195 Ohm
   Paquete / Cubierta: TO220F

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MMFT60R195PCTH Datasheet (PDF)

..1. Size:1295K magnachip
mmft60r195pcth.pdf

MMFT60R195PC Datasheet MMFT60R195PC 600V 0.195 N-channel MOSFET Description MMFT60R195PC is power MOSFET using Magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as we

..2. Size:279K inchange semiconductor
mmft60r195pcth.pdf

isc N-Channel MOSFET Transistor MMFT60R195PCTHFEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.195(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand

3.1. Size:1413K magnachip
mmft60r195pth.pdf

MMFT60R195P Datasheet MMFT60R195P 600V 0.195 N-channel MOSFET Description MMFT60R195P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well

3.2. Size:279K inchange semiconductor
mmft60r195pth.pdf

isc N-Channel MOSFET Transistor MMFT60R195PTHFEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.195(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand

6.1. Size:1291K magnachip
mmft60r115pcth.pdf

MMFT60R115PC Datasheet MMFT60R115PC 600V 0.115 N-channel MOSFET Description MMFT60R115PC is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as we

6.2. Size:279K inchange semiconductor
mmft60r115pcth.pdf

isc N-Channel MOSFET Transistor MMFT60R115PCTHFEATURESDrain Current : I = 33A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.115(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand

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