Справочник MOSFET. MMFT60R195PCTH

 

MMFT60R195PCTH Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: MMFT60R195PCTH
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 34 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 20 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 50 ns
   Cossⓘ - Выходная емкость: 999 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.195 Ohm
   Тип корпуса: TO220F
     - подбор MOSFET транзистора по параметрам

 

MMFT60R195PCTH Datasheet (PDF)

 ..1. Size:1295K  magnachip
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MMFT60R195PCTH

MMFT60R195PC Datasheet MMFT60R195PC 600V 0.195 N-channel MOSFET Description MMFT60R195PC is power MOSFET using Magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as we

 ..2. Size:279K  inchange semiconductor
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MMFT60R195PCTH

isc N-Channel MOSFET Transistor MMFT60R195PCTHFEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.195(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand

 3.1. Size:1413K  magnachip
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MMFT60R195PCTH

MMFT60R195P Datasheet MMFT60R195P 600V 0.195 N-channel MOSFET Description MMFT60R195P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well

 3.2. Size:279K  inchange semiconductor
mmft60r195pth.pdfpdf_icon

MMFT60R195PCTH

isc N-Channel MOSFET Transistor MMFT60R195PTHFEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.195(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand

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History: FQP1N50 | NCEP065N10GU

 

 
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