JFAM20N50D Todos los transistores

 

JFAM20N50D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: JFAM20N50D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 271 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 85 nS
   Cossⓘ - Capacitancia de salida: 250 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.35 Ohm
   Paquete / Cubierta: TO3P
 

 Búsqueda de reemplazo de JFAM20N50D MOSFET

   - Selección ⓘ de transistores por parámetros

 

JFAM20N50D Datasheet (PDF)

 ..1. Size:545K  jiaensemi
 jfam20n50d.pdf pdf_icon

JFAM20N50D

JFAM20N50D 500V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

 5.1. Size:845K  jiaensemi
 jfam20n50c.pdf pdf_icon

JFAM20N50D

JFAM20N50C 500V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

 5.2. Size:541K  jiaensemi
 jfam20n50e.pdf pdf_icon

JFAM20N50D

JFAM20N50E 500V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

 7.1. Size:833K  jiaensemi
 jfam20n65c.pdf pdf_icon

JFAM20N50D

JFAM20N65C 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

MOSTRAR MÁS

Otros transistores... MMF80R900PBTH , MMFT60R195PCTH , S40N14S , HY3408 , STP1806 , YMP230N55 , JFAM18N50C , JFAM20N50C , 8205A , JFAM20N50E , JFAM20N60C , JFAM20N60D , JFAM20N60E , JFAM20N65C , JFAM20N65E , JFAM24N50C , JFAM25N50E .

History: BUZ104S | KF2N60D | IRFP153FI | WMK28N50C4 | SRC60R030FBS | NCE40P40D | IRF1404LPBF

 

 
Back to Top

 


 
.