JFAM20N50D Specs and Replacement
Type Designator: JFAM20N50D
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 271 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 85 nS
Cossⓘ - Output Capacitance: 250 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
Package: TO3P
JFAM20N50D substitution
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JFAM20N50D datasheet
jfam20n50d.pdf
JFAM20N50D 500V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency ... See More ⇒
jfam20n50c.pdf
JFAM20N50C 500V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency ... See More ⇒
jfam20n50e.pdf
JFAM20N50E 500V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency ... See More ⇒
jfam20n65c.pdf
JFAM20N65C 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency ... See More ⇒
Detailed specifications: MMF80R900PBTH , MMFT60R195PCTH , S40N14S , HY3408 , STP1806 , YMP230N55 , JFAM18N50C , JFAM20N50C , IRFP260 , JFAM20N50E , JFAM20N60C , JFAM20N60D , JFAM20N60E , JFAM20N65C , JFAM20N65E , JFAM24N50C , JFAM25N50E .
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