All MOSFET. JFAM20N50D Datasheet

 

JFAM20N50D Datasheet and Replacement


   Type Designator: JFAM20N50D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 271 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 85 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
   Package: TO3P
 
   - MOSFET ⓘ Cross-Reference Search

 

JFAM20N50D Datasheet (PDF)

 ..1. Size:545K  jiaensemi
 jfam20n50d.pdf pdf_icon

JFAM20N50D

JFAM20N50D 500V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

 5.1. Size:845K  jiaensemi
 jfam20n50c.pdf pdf_icon

JFAM20N50D

JFAM20N50C 500V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

 5.2. Size:541K  jiaensemi
 jfam20n50e.pdf pdf_icon

JFAM20N50D

JFAM20N50E 500V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

 7.1. Size:833K  jiaensemi
 jfam20n65c.pdf pdf_icon

JFAM20N50D

JFAM20N65C 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

SHOW MORE

Datasheet: MMF80R900PBTH , MMFT60R195PCTH , S40N14S , HY3408 , STP1806 , YMP230N55 , JFAM18N50C , JFAM20N50C , 8205A , JFAM20N50E , JFAM20N60C , JFAM20N60D , JFAM20N60E , JFAM20N65C , JFAM20N65E , JFAM24N50C , JFAM25N50E .

History: QS5K2

Keywords - JFAM20N50D MOSFET datasheet

 JFAM20N50D cross reference
 JFAM20N50D equivalent finder
 JFAM20N50D lookup
 JFAM20N50D substitution
 JFAM20N50D replacement

 

 
Back to Top

 


 
.