All MOSFET. JFAM25N50E Datasheet

 

JFAM25N50E Datasheet and Replacement


   Type Designator: JFAM25N50E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 85 nS
   Cossⓘ - Output Capacitance: 1050 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: TO3P
 

 JFAM25N50E substitution

   - MOSFET ⓘ Cross-Reference Search

 

JFAM25N50E Datasheet (PDF)

 ..1. Size:1363K  jiaensemi
 jfam25n50e.pdf pdf_icon

JFAM25N50E

JFAM25N50E 500V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

 9.1. Size:545K  jiaensemi
 jfam20n50d.pdf pdf_icon

JFAM25N50E

JFAM20N50D 500V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

 9.2. Size:497K  jiaensemi
 jfam24n50c.pdf pdf_icon

JFAM25N50E

JFAM24N50C 500V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

 9.3. Size:833K  jiaensemi
 jfam20n65c.pdf pdf_icon

JFAM25N50E

JFAM20N65C 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

SHOW MORE

Datasheet: JFAM20N50D , JFAM20N50E , JFAM20N60C , JFAM20N60D , JFAM20N60E , JFAM20N65C , JFAM20N65E , JFAM24N50C , 4435 , JFAM30N50E , JFAM30N60E , JFAM50N50C , JFAM7N90C , JFFC10N65D , JFFC13N65D , JFFC20N65C , JFFC7N65E .

History: FDP5N50 | HY5N50T

Keywords - JFAM25N50E MOSFET datasheet

 JFAM25N50E cross reference
 JFAM25N50E equivalent finder
 JFAM25N50E lookup
 JFAM25N50E substitution
 JFAM25N50E replacement

 

 
Back to Top

 


 
.